2012
DOI: 10.1016/j.orgel.2012.01.011
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Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell

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Cited by 61 publications
(37 citation statements)
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“…Doping of ZnO is straightforward approach to tune its materials properties. [31][32][33][34][35][36][37] However, doping is generally difficult to control and reproduce. In fact, the materials properties of ZnO highly depend on the growth conditions, such as oxygen levels, impurities, growth rate and temperature, and even post annealing.…”
Section: Introductionmentioning
confidence: 99%
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“…Doping of ZnO is straightforward approach to tune its materials properties. [31][32][33][34][35][36][37] However, doping is generally difficult to control and reproduce. In fact, the materials properties of ZnO highly depend on the growth conditions, such as oxygen levels, impurities, growth rate and temperature, and even post annealing.…”
Section: Introductionmentioning
confidence: 99%
“…ZnO films grown by sol-gel methods have been widely used as an electron conductive layer in this device configuration. 31,33,34,36,43,47 Enhanced electrical conductivity of ZnO film may improve the performance of electron conductive ZnO layer in inverted polymer solar cell. By introducing a variety of methods of doping, several studies have focused on improving electrical conductivities of ZnO films for the applications of inverted polymer solar cells.…”
Section: Introductionmentioning
confidence: 99%
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“…A suitable electrode modification can improve the device efficiency and decrease the effect of degradation induced by the radiation and environmental conditions [3,4]. Additionally, it may allow the use of more stable metal-top electrodes, such as Ag and Au with devices in inverted structures, what also improves the device durability [5].…”
Section: Introductionmentioning
confidence: 99%
“…ZTO has previously been used as an electron transport layer in organic optoelectronic devices 10,11 and in thin-film transistors as the channel material. 12,13 It was shown to be a promising indium-free n-type metal oxide with high electron mobility and transparency, as well as good temperature stability and mechanical integrity.…”
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confidence: 99%