Zinc Phthalocyanine–Graphene Hybrid Material for Energy Conversion: Synthesis, Characterization, Photophysics, and Photoelectrochemical Cell Preparation

Karousis, Nikolaos; Ortíz, Javier; Ohkubo, Kei; Hasobe, Taku; Fukuzumi, Shunichi; Sastre‐Santos, Ángela; Tagmatarchis, Nikos

doi:10.1021/jp305783v

Cited by 114 publications

(96 citation statements)

References 93 publications

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“…Many kinds of surfactants, polymers or molecules of DNA and protein are used as dispersion aids, and pristine or functionalized CNTs can also be directly dispersed in organic solvents and water. [62] CNT inks can be deposited onto substrates by various methods including filtration-transfer, [63] spincoating, [64,65] Langmuir-Blodgett coating, [66,67] dip-coating, [68] self-assembly coating, [69] spray-coating, [70] electrophoretic deposition, [71,72] rod coating [73] and R2R printing. [74] The ideal deposition method should allow the assembly of uniform films at high throughput on any substrate.…”

Section: Transparent Electrodesmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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silicon wafer, TFTs can be fabricated on various types of rigid or flexible substrates. [1] TFTs fabricated on glass are primarily used for driving circuits in the liquid-crystal displays of televisions, computer monitors, and mobile phones, etc. Well-established TFT technologies based on amorphous silicon and polycrystalline silicon are well-suited for large-area, highresolution panels, e.g., six pieces of 65-and 75-inch TFT arrays can be fabricated on a 10.5th generation glass substrate. [2] However, TFTs based on these silicon-based semiconductors still face challenges in flexible and transparent applications, which would allow circuit integration on curved and non-rigid surfaces and in multi-layer packaging, e.g., head-up displays on windshields, informational displays on eyeglasses and transparent electronic skin in wearable electronics. [3] In terms of the materials used to construct flexible and transparent devices, not only the transistor channel but also the dielectric layers and metallic interconnects should have excellent flexibility and transparency. [4] The following factors play critical roles in the selection of channel materials: carrier mobility, temperature of material preparation, flexibility, large area availability, cost and stability. Carrier mobility is an important parameter to characterize the drift velocity of electrons or holes in a semiconductor under an applied electric field. [5] A high mobility corresponds to a high operating speed of the TFTs and their circuits. The only advantage of low-temperature polycrystalline silicon is its relatively high mobility. [6] Amorphous oxide semiconductors, including indium gallium zinc oxide, have a modest mobility and are costly due to the use of noble metal elements. [7] Hydrogenterminated amorphous silicon has modest properties in carrier mobility, large-area and flexibility, [1] and organic semiconductors are better suited for flexible and transparent TFTs except for their shortcomings of low mobility and poor environmental stability. [8] On the other hand, normal metal electrodes, such as gold, silver, aluminum and copper, cannot be used to form transparent electrodes due to their poor light transmittance. Both transparent indium tin oxide (ITO) electrodes and opaque metal electrodes suffer from flexibility constraints and can usually tolerate strains of less than 2%. [9][10][11] Therefore, the discovery of new types of robust channel and electrode materials is essential to achieve transparent, flexible, and even stretchable electronics. [12] Carbon nanomaterials, such as carbon nanotubes (CNTs) and graphene, have attracted great attention for potential use in flexible and transparent electronics since their discovery in the last two decades, [13,14] owing to their excellent properties Carbon nanotubes and graphene have attracted great attention for potential applications in flexible and transparent electronics, owing to their exceptional properties including very high electrical conductivity, optical transmittance, mechanical strength and f...

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Section: Transparent Electrodesmentioning

confidence: 99%

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Sun

Liu

Ren

et al. 2016

Adv Elect Materials

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“…CNT hybrids have successfully been employed as sensors utilizing electrochemical, electric (ohmic), and optical detection techniques, [12][13][14][15] they have also been invariably examined as active layers element in solar cell [16][17][18] and in magnetic devices.…”

Section: -11mentioning

confidence: 99%

Hybrid materials of pyrene substituted phthalocyanines with single-walled carbon nanotubes: structure and sensing properties

et al. 2015

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“…Previous works focus on balancing the transparency and the sheet resistance of graphene by varying the layer number [15] or on controlling the electronic properties by molecular doping (ground-state charge transfer) [16,17]. However, dynamic processes such as the transfer of localized charges from organic materials to graphene are less explored [18][19][20]. An interesting question is whether the charge-transfer (CT) rate depends on the number of graphene layers and the stacking.…”

Section: Introductionmentioning

confidence: 99%

Effect of Interlayer Coupling on Ultrafast Charge Transfer from Semiconducting Molecules to Mono- and Bilayer Graphene

Wang

Caraiani

et al. 2015

Phys. Rev. Applied

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Graphene is used as flexible electrodes in various optoelectronic devices. In these applications, ultrafast charge transfer from semiconducting light absorbers to graphene can impact the overall device performance. Here, we propose a mechanism in which the charge-transfer rate can be controlled by varying the number of graphene layers and their stacking. Using an organic semiconducting molecule as a light absorber, the charge-transfer rate to graphene is measured by using time-resolved photoemission spectroscopy. Compared to graphite, the charge transfer to monolayer graphene is about 2 times slower. Surprisingly, the charge transfer to A-B-stacked bilayer graphene is slower than that to both monolayer graphene and graphite. This anomalous behavior disappears when the two graphene layers are randomly stacked. The observation is explained by a charge-transfer model that accounts for the band-structure difference in mono-and bilayer graphene, which predicts that the charge-transfer rate depends nonintuitively on both the layer number and stacking of graphene.

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Zinc Phthalocyanine–Graphene Hybrid Material for Energy Conversion: Synthesis, Characterization, Photophysics, and Photoelectrochemical Cell Preparation

Cited by 114 publications

References 93 publications

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

All‐Carbon Thin‐Film Transistors as a Step Towards Flexible and Transparent Electronics

Hybrid materials of pyrene substituted phthalocyanines with single-walled carbon nanotubes: structure and sensing properties

Effect of Interlayer Coupling on Ultrafast Charge Transfer from Semiconducting Molecules to Mono- and Bilayer Graphene

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