Zinc phosphide epitaxial growth by photo-MOCVD

Emissive ZnO@Zn3P2 Nanocrystals: Synthesis, Optical, and Optoelectrochemical Properties

“…Presently, the strategies reported for the preparation of Zn 3 P 2 or Zn 3 P 2 ‐based composites usually require high temperatures and harsh reaction conditions,14 and methods thus far employed for their synthesis include photo‐organometallic chemical vapor deposition,15 thermal‐assisted pulsed laser ablation,7 hot‐wall epitaxy,16 radio‐frequency sputtering,17 vacuum evaporation,18, 19 carbon reduction,20 and electrochemical deposition 21. To date, most of the work published concerns itself with the preparation and physical properties of Zn 3 P 2 ‐composite materials,7, 22–25 which include InP/Zn 3 P 2 ,26 Mg/Zn 3 P 2 ,27 Zn 3 P 2 /ZnSe,15 indium tin oxide (ITO)/Zn 3 P 2 ,28 Zn 3 P 2 /ZnS,29 and ZnO/Zn 3 P 2 ,30, 31 the latter being prepared by the sputter deposition of ZnO onto Zn 3 P 2 substrates. However, the synthesis of zinc phosphide or ZnO/Zn 3 P 2 colloidal NCs via a solution‐based route has barely been reported 32.…”

Low Temperature Synthesis of Zn3P2 Nanowire

“…Zn 3 P 2 is an important II-V group semiconductor for optoelectronic applications since it has a direct bandgap in the range of 1.4-1.6 eV that corresponds to the optimum range for solar energy conversion [1][2][3]. In addition, abundance of its constituent atoms leads to increased feasibility of large scale development of devices, such as solar cells, infrared and/or ultraviolet sensors [4]. Syntheses of one-dimensional (1-D) nanostructures, such as tubes, wires, belts and ribbons, have drawn considerable attention because of potential applications in nanosize devices with various functionalities.…”

“…A number of studies have reported synthesis of 1-D Zn 3 P 2 nanostructures using various synthesis methods including thermochemical processes [5], thermal-assisted pulsed laser ablation [2], and chemical vapor deposition [6]. From the perspectives of technology, however, the synthesis temperatures in those reports are rather high ranging from 850 to 1400 o C [2,[4][5][6][7]. In this study, we report low temperature synthesis of Zn 3 P 2 nanowires using a chemical reflux method.…”

“…In addition, abundance of its constituent atoms leads to increased feasibility of large scale development of devices, such as solar cells, infrared and/or ultraviolet sensors [4]. Syntheses of one-dimensional (1-D) nanostructures, such as tubes, wires, belts and ribbons, have drawn considerable attention because of potential applications in nanosize devices with various functionalities.…”

Thin Film Solar Cells Using Earth-Abundant Materials

“…Zinc, as well as phosphorous, is abundant in the earth's crust. This makes their cost-effective development quite feasible when it comes to large scale production [73,79]. Zinc phosphide is a tetragonal p-type low cost material with lattice constants of a = b =8.097 Å and c=11.45 Å [17] and has all the right characteristics for photo conversion.…”