Zinc Oxynitride Films Prepared by Pulsed Laser Deposition

Ayouchi, R.; Melo, Luciana S.; Bhattacharyya, Souvik; Bundaleski, Nenad; Teodoro, O.M.N.D.; Santos, Luís Felipe Pupim dos; Schwarz, R.

doi:10.1016/j.protcy.2014.10.241

Cited by 5 publications

(5 citation statements)

References 5 publications

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“…As expected, the grain size reduced at the higher temperature of 390˚C, and the film became more compact with an average grain size of 100 nm. This was consistent with the result obtained by Ayouchi et al ( 2014) [1]. It was observed that grain size varies with temperature through the MOCVD technique, similar to what was reported for the Pulse Layer Deposition method [13].…”

Section: Fourier-transform Infrared Spectrum Of the Precursorsupporting

confidence: 92%

“…Transition metal oxynitrides are composite materials that have outstanding prop- erties which make them useful in the area of micro and optoelectronic devices, sensors, and photoconductors [1]- [6]. A study by Lee et al (2015) [5] revealed that the thin film of zinc oxynitride is becoming a promising transparent semiconductor because of the combination of its unique optical and electrical properties.…”

Section: Introductionmentioning

confidence: 99%

“…Many research groups that have fabricated ZnO:N thin films utilized Zn or ZnO as starting material, employ, nitrogen (N 2 ) or mixed N 2 -O 2 as a dopant source using high-temperature deposition techniques such as reactive radiofrequency magnetron sputtering [11] [12] and Pulse Laser deposition [1] [13],…”

Section: Introductionmentioning

confidence: 99%

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Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor

Akinwunmi¹,

Adelabu²,

Famojuro³

et al. 2022

MSA

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A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370˚C and 390˚C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370˚C and 390˚C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film.

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Section: Fourier-transform Infrared Spectrum Of the Precursorsupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor

Akinwunmi¹,

Adelabu²,

Famojuro³

et al. 2022

MSA

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“…The smooth surface morphological images depict a single layer of SiO2 and TiO2 thin film. A single layer of SiO2 and TiO2 thin film composes the surface morphological images appear to be smooth, however, some of the amorphous nature particles appeared on the sample surfaces were due to the calcinations process [32][33][34][35][36][37][38].…”

Section: Resultsmentioning

confidence: 99%

Sol-Gel Spin Coated Transparent Single-TiO2 and SiO2 Thin Film on Glass for Opto-electronic Applications

Sigamani,

Someswararao,

Swaminatham

2024

ajc

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Great attention has been given on the sol-gel synthesis and spin-coating deposition techniques for the fabrication of various thin films. Because of its simple technique to fabricate dielectric (metal oxide) films using tetraethyl orthosilicate and titanium isopropoxide precursors. In this work, transparent single layer of SiO2 and TiO2 thin film was deposited on a glass substrate and characterized by FTIR, UV-visible spectroscopy, fluorescence and scanning electron microscopy techniques. The single layer thin film was mechanically stable and strong by adhering to glass substrates. The FTIR transmittance spectrum evidenced the existence of Si-O-Si and Ti-O-Ti at ~1100 and 1400 cm-1. The UV-visible absorbance spectra of single layer of SiO2 and TiO2 thin films showed strong absorption at below 00 nm. The excitation wavelength at 380 nm, the fluorescence spectra of both thin films showed the highest emission spectrum in between 733-798 nm. The SEM studies confirmed the smooth surface in both SiO2 and TiO2 layers. Further, it could be useful for various applications such as back reflector in solar cells, anti-reflection coatings, hydrophobic and anti-fogging materials.

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“…These studies have investigated the properties and potential applications of ZnON thin films, including their optical and electronic properties [16][17][18][19][20], as well as their potential use in devices such as light-emitting diodes (LEDs) [17], solar cells [18], and sensors [19]. Recent research has also focused on developing methods for synthesising high-quality ZnON thin films, including chemical vapour deposition (CVD) [20] and pulsed laser deposition (PLD) techniques [21].…”

Section: Introductionmentioning

confidence: 99%

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

J G,

Jose,

Nair

et al. 2024

Mater. Res. Express

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Zinc oxynitride (ZnON) has recently emerged as a highly promising band gap-tunable semiconductor material for optoelectronic applications. In this study, a novel DC reactive sputtering protocol was developed to fabricate ZnON films with varying elemental concentrations, by precisely controlling the working pressure. The working pressure was varied from 0.004 mbar to 0.026 mbar.For working pressure greater than 1.6 x 10$^{-3}$mbar, the mean free path of ions decrease, the sputtering rate decreases and the concentration of nitrogen in the films decreases. The band gap of the film obtained from UV Vis Spectroscopy initially decreases and reaches a minimum of 1.6 eV at a flow rate of 20 sccm of nitrogen, after which it drastically increases. The correlation between the micro structure and band gap was investigated. The initial alloy structure of the film was found to exist when the band gap was between 1.66 eV and 2.15 eV, beyond which, a distorted wurtzite structure began to emerge. At a band gap of 2.7 eV, the spectrum peaks indicated the coexistence of both alloy and wurtzite structures. With an increasing band gap, the wurtzite structure became dominant, completely replacing the alloy structure at 3.25 eV. This study revealed the existence of intermediate structures formed during the tuning of the band gap, which can have important implications for future research aimed at developing heterostructures and 2D superlattices for photonics applications.

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Zinc Oxynitride Films Prepared by Pulsed Laser Deposition

Cited by 5 publications

References 5 publications

Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor

Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor

Sol-Gel Spin Coated Transparent Single-TiO2 and SiO2 Thin Film on Glass for Opto-electronic Applications

DC reactive sputtering of ZnON thin films: band gap engineering and associated evolution of microstructures

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