Zinc nonstoichiometry in ZnO

Lott, K.; Shinkarenko, S.; Kirsanova, T. S.; Türn, L.; Gorohova, E.; Grebennik, A.; Vishnjakov, A.

doi:10.1016/j.ssi.2004.07.048

Cited by 13 publications

(4 citation statements)

References 21 publications

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“…This nonstoichiometry in ZnO, which is due to oxygen vacancies (V O ) or zinc interstitials (Zn i ), gives rise to donor band conduction at low temperatures [1][2].…”

Section: Introductionmentioning

confidence: 99%

Sintering behavior of ZnO:Al ceramics fabricated by sol‐gel derived nanocrystalline powders

Bahşi

Aslan

Özer

et al. 2009

Cryst. Res. Technol.

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ZnO:Al ceramics (Zn:Al, 0.95:0.05) were prepared by using sol-gel derived nanocrystalline powders. XRD patterns of the doped ceramics revealed the existence of both zincite (JCPDS 36-1451) and gahnite (JCPDS 5-0669) phases. Gahnite phase (ZnAl 2 O 4 ) was segregated along the ZnO grain boundaries. At the sintering temperature of 1200 °C, relative density of the undoped and Al doped ceramics were measured as 0.695 and 0.628, respectively. Both grain size and relative density of the ceramics decreased with Al doping.

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“…This nonstoichiometry in ZnO, which is due to oxygen vacancies (V O ) or zinc interstitials (Zn i ), gives rise to donor band conduction at low temperatures [1][2].…”

Section: Introductionmentioning

confidence: 99%

Sintering behavior of ZnO:Al ceramics fabricated by sol‐gel derived nanocrystalline powders

Bahşi

Aslan

Özer

et al. 2009

Cryst. Res. Technol.

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“…Physical properties of undoped ZnO crystals depend strongly on the concentration of native defects caused by the deviation from the stoichiometric composition . To determine the excess zinc in powder, in ceramic and in single crystal ZnO, the atomic absorption photometry (AAP) of zinc vapour was used in the conditions of solid‐vapour equilibrium . Undoped ZnO exhibits n‐type electrical conductivity, which may be due to an excess of the metal component excess or/and by an impurity caused shallow donor.…”

Section: Introductionmentioning

confidence: 99%

High temperature electrical conductivity in undoped ceramic ZnO

Lott

Nirk

Gorokhova

et al. 2014

Crystal Research and Technology

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The results of high temperature electrical conductivity (HTEC) measurements in undoped ceramic ZnO sample are presented. The ceramic sample under investigation was formed at high pressure and at high temperature in inert atmosphere. HTEC measurements data were obtained under the defined Zn component vapor pressure (up to 1 atm) and in temperature range (up to 1373 K). In these experiments the absolute value of HTEC in ZnO samples was several orders of magnitude higher than in undoped ZnS measured under the same conditions. Slow chemical diffusion was observed in ZnO. Slopes of HTEC isotherms in ZnO samples varied with component vapor pressure in the range from 0 to 0.2. Defect model for explanation of this experiment is discussed.

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“…Assuming the injected holes penetrate $1 nm into the film, the measured area density of $10 10 cm À2 ( Fig. 1(a) 21,22 although this should vary with annealing temperature and may be reduced at the sample surface. 23 The similarity between our measured defect concentration and the reported values for V O in ZnO is encouraging.…”

mentioning

confidence: 99%

Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence

Likovich

Jaramillo

Russell

et al. 2011

Applied Physics Letters

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We present an investigation of optically active near-surface defects in sputtered Al-doped ZnO films using scanning tunneling microscope cathodoluminescence (STM-CL). STM-CL maps suggest that the optically active sites are distributed randomly across the surface and do not correlate with the granular topography. In stark contrast to photoluminescence results, STM-CL spectra show a series of sharp, discrete emissions that characterize the dominant optically active defect, which we propose is an oxygen vacancy. Our results highlight the ability of STM-CL to spectrally fingerprint individual defects and contribute to understanding the optical properties of near-surface defects in an important transparent conductor.

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Zinc nonstoichiometry in ZnO

Cited by 13 publications

References 21 publications

Sintering behavior of ZnO:Al ceramics fabricated by sol‐gel derived nanocrystalline powders

Sintering behavior of ZnO:Al ceramics fabricated by sol‐gel derived nanocrystalline powders

High temperature electrical conductivity in undoped ceramic ZnO

Narrow band defect luminescence from Al-doped ZnO probed by scanning tunneling cathodoluminescence

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