Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

Carbonetto, S.; Inza, M. A. García; Lipovetzky, J.; Redin, E.; Salomone, L. Sambuco; Faigon, A.

doi:10.1109/tns.2011.2170430

Cited by 23 publications

(7 citation statements)

References 21 publications

(57 reference statements)

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“…In contrast, when temperature varies, the negative threshold voltage of pMOS transistors becomes less negative, approaching zero, and the threshold voltage of nMOS transistors also approaches zero, becoming smaller [5][6][7][8][9]. This behavior is depicted in Figure 2.…”

Section: Introductionmentioning

confidence: 94%

Reliable Temperature Measurement in Radiation-Intensive Environments

Petrashin,

Lancioni,

Laprovitta

et al. 2024

JAREE

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Radiation-resistant temperature sensors are vital for ensuring reliability in radiation-intensive environments, where the highly energetic and penetrating nature of radiation can significantly impact electronic devices and sensors. In such environments, like those near intense radiation sources or in challenging radiation-rich settings, such as space, gamma radiation can lead to erroneous measurements or equipment failures. Radiation-resistant sensors play a crucial role in maintaining measurement accuracy as they are designed to minimize interference caused by radiation, protecting electronic components and providing precise and reliable temperature readings. Their resilience to radiation-induced effects ensures data durability, reducing the need for frequent replacements, and enhancing the overall reliability of measurements in these demanding conditions. In this paper, we present and analyze two different configurations, aiming to address the challenges posed by radiation in sensitive environments. By exploring these novel approaches, we seek to enhance the robustness and accuracy of temperature sensors in radiation-intensive settings, enabling reliable data collection and facilitating successful operations in challenging radiation-rich conditions. The comparative analysis of these configurations will shed light on their performance and effectiveness in mitigating radiation-induced effects, thereby contributing to the advancement of radiation-resistant temperature sensing technologies.

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Section: Introductionmentioning

confidence: 94%

Reliable Temperature Measurement in Radiation-Intensive Environments

Petrashin,

Lancioni,

Laprovitta

et al. 2024

JAREE

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“…1. In addition to the changes in V T and n, the carrier mobility m decreases with the dose (Schwank et al, 2008), (Schrimpf et al, 2007), (Carbonetto et al, 2011).…”

Section: Summary Of the Effects Of Ionizing Radiation On Mosfetsmentioning

confidence: 99%

“…In fact, the authors of (Carvajal et al, 2010), (Carvajal et al, 2011) used multiple bias currents combined with a cumbersome algorithm to improve the linearity of a MOSFET dosimeter biased with the MTC current. Also, it is important to note that the value of the MTC current changes with the dose; therefore, in some cases, it would be necessary to use multiple MTC currents for proper compensation of the temperature variation in a complete treatment (Sarrabayrouse and Siskos, 1998), (Carbonetto et al, 2011).…”

Section: Temperature Desensitization and Data Processingmentioning

confidence: 99%

A very-low-cost dosimeter based on the off-the-shelf CD4007 MOSFET array for in vivo radiotherapy applications

Siebel

Pereira

Souza

et al. 2015

Radiation Measurements

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“…Considering these requirements (i.e., channel length above 200 nm and wide output swing), to reach the high-temperature operation which we targeted, we sized the transistors to obtain a target current of 40 µA at the zero-temperature coefficient (ZTC) DC operating point [21,22]. At this point, the decrease in the carrier's mobility and in the threshold voltage with temperature compensated perfectly, leading to a temperature-independent current that depended only on the temperature-independent gate-source voltage.…”

Section: Circuit Descriptionmentioning

confidence: 99%

An Integrated Charge Pump for Phase-Locked Loop Applications in Harsh Environments

Mestice,

Ciarpi,

Rossi

et al. 2024

Electronics

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Among all the functions that electronics currently perform, clock synthesis has a backbone role. Charge pump phase-locked loops (CP-PLL) are widely used to accomplish clock synthesis thanks to their versatility. One of the most critical parts of CP-PLLs is the charge pump, which greatly influences the system’s performance. Even though several high-performance charge pumps have been proposed in the past, with the quick spread of electronics in all the engineering fields, the design of such electronic devices has encountered several additional challenges dictated by external environmental conditions. Examples of these engineering sectors are space, aerospace, industrial, and automotive applications, where the charge pump has to face high environmental temperatures and radiation effects. As a consequence, its design and experimental characterization have to be performed to ensure reliability when operating in harsh conditions. However, to the best of the authors’ knowledge, no works in the literature have ever presented a complete charge pump design and characterization in such harsh environments. Therefore, to fill this gap, this paper presents a charge pump for PLL applications specifically designed to reach operating temperatures up to 200 °C and total ionizing dose levels up to 100 Mrad. All design choices have been experimentally verified and are discussed throughout the paper in detail. With the proposed design, we obtained an output current variation of less than 8% at 200 °C and less than 2.5% at 100 Mrad. As opposed to the CPs that can be found in the literature, these results were measured on silicon. The performed measurements confirm that the current variation at 200 °C is better than that of the state-of-the-art CPs operating at lower temperatures, which, moreover, were only simulated.

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Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

Cited by 23 publications

References 21 publications

Reliable Temperature Measurement in Radiation-Intensive Environments

Reliable Temperature Measurement in Radiation-Intensive Environments

A very-low-cost dosimeter based on the off-the-shelf CD4007 MOSFET array for in vivo radiotherapy applications

An Integrated Charge Pump for Phase-Locked Loop Applications in Harsh Environments

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