Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

Mani, R. G.; Smet, J. H.; Klitzing, K. von; Narayanamurti, V.; Johnson, W.B.; Umansky, V.

doi:10.1038/nature01277

Cited by 658 publications

(985 citation statements)

References 32 publications

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“…However we believe that this state has strapping interrelations with the zero resistance state found in the microwave experiments [3,4]. Our conclusion is based on a) the apparent relation between the zero differential resistance state and the strong decrease of the resistance due to the dc bias, b) experiments [16], indicating that the bias induced variations of the distribution function [12] is the dominant mechanism of the dc nonlinearity and c) convincing theoretical arguments demonstrating that the same nonlinear mechanism should be dominant both for the dc [12] and the microwave [5,12] induced nonlinearities.…”

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confidence: 99%

“…Strong oscillations of the longitudinal resistance induced by microwave radiation have been found at magnetic fields which satisfy the condition ω = n × ω c , where ω is the microwave frequency, ω c is cyclotron frequency and n=1,2.... [1,2] At high levels of the microwave excitations the minima of the oscillations can reach value close to zero. [3,4,5,6] This so-called zero resistance state (ZRS) has stimulated extensive theoretical interest. [7,8,9,10,11,12] At higher magnetic field ω c > ω a considerable decrease of magnetoresistance with microwave power is found [2,5,6] which has been attributed to intra-Landau-level transitions.…”

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Zero-Differential Resistance State of Two-Dimensional Electron Systems in Strong Magnetic Fields

et al. 2007

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Zero differential resistance state is found in response to direct current applied to 2D electron systems at strong magnetic field and low temperatures. Transition to the state is accompanied by sharp dip of negative differential resistance, which occurs above threshold value I th of the direct current. The state depends significantly on the temperature and is not observable above several Kelvins. Additional analysis shows lack of the linear stability of the 2D electron systems at I > I th and inhomogeneous, non-stationary pattern of the electric current in the zero differential resistance state. We suggest that the dc bias induced redistribution of the 2D electrons in energy space is the dominant mechanism leading to the new electron state.

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confidence: 99%

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Zero-Differential Resistance State of Two-Dimensional Electron Systems in Strong Magnetic Fields

et al. 2007

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“…So, microwave-induced oscillations were observed, which were up to now not fully understood. [3][4][5] In weak magnetic fields the increased mobility enabled also the observation of phonon-induced resistance oscillations, which are caused by inelastic scattering between electrons and three-dimensional acoustic phonons. 6,7 The period of phonon-induced oscillations is tunable by an additional dc electric field.…”

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Magnetoresistance in a high-mobility two-dimensional electron gas

et al. 2011

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In a high-mobility two-dimensional electron gas (2DEG) in a GaAs/Al 0.3 Ga 0.7 As quantum well we observe a strong magnetoresistance. In lowering the electron density, the magnetoresistance gets more pronounced and reaches values of more than 300%. We observe that the huge magnetoresistance vanishes when increasing the temperature. An additional density-dependent factor is introduced to be able to fit the parabolic magnetoresistance to the electron-electron interaction correction. Since the first observation of the fractional quantum Hall effect (FQHE) 1,2 the quality and the mobility of the two-dimensional electron gas (2DEG) increased by more than two orders of magnitude. The increased mobility has allowed not only the observation of the FQHE at many different filling factors and smaller magnetic fields but also many new effects. So, microwave-induced oscillations were observed, which were up to now not fully understood. [3][4][5] In weak magnetic fields the increased mobility enabled also the observation of phonon-induced resistance oscillations, which are caused by inelastic scattering between electrons and three-dimensional acoustic phonons. 6,7 The period of phonon-induced oscillations is tunable by an additional dc electric field. 8,9 Also a new type of QHE was enabled in high mobility 2DEGs, the re-entrant integer quantum Hall effect (RIQHE). 10,11 In the regime of the RIQHE the longitudinal resistance between integer filling factors decreases to zero suggesting fractional filling factors, but the corresponding Hall plateaus are quantized at integer values.Here we will present the observation of a huge magnetoresistance in a high mobility 2DEG which depends strongly on electron density and temperature.Our samples were cleaved from a wafer of a high-mobility GaAs/Al 0.3 Ga 0.7 As quantum well grown by molecular-beam epitaxy. The quantum well has a width of 30 nm and is Si-doped from both sides. The 2DEG is located 150 nm beneath the surface and has an electron density of n e ≈ 3.1 × 10 11 cm −2 and a mobility of μ ≈ 11.9 × 10 6 cm 2 /Vs in the dark. The specimens are Hall bars with a total length of 1.2 μm, a width of w = 200 μm and a potential probe spacing of l = 275 μm [see Fig. 1(a)]. The Hall bars were defined by photolithography and wet etching. Different ungated and gated samples were used for the magnetotransport measurements. In the case of the gated sample there is an additional layer of 600 nm PMMA between the Hall bar and the metallic top-gate to avoid leakage current. We apply top-gate voltages up to −6 V to manipulate the electron density. Our measurements were performed in a dilution refrigerator with a base temperature of 20 mK. The measurements were carried out by using low-frequency (13 Hz) lock-in technique.Figure 1(a) shows the longitudinal resistance R xx and the Hall resistance R xy vs. magnetic field B to demonstrate the quality of our samples. A series of different fractional quantum Hall states appears for filling factor ν < 2. We observe also the filling factor ν = 5/2. Over the ...

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“…In very high mobility samples the minima of these oscillations correspond to exponentially small resistance [1][2][3] . There are many suggested analogies to explain this entirely unexpected phenomenon [1][2][3][4][5][6][7][8][9] . Photon-assisted formation of collective tunneling states between initial and final states involving multiquantum well (MQW) geometries is well known 10 .…”

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Microscopic origin of collective exponentially small resistance states

Phillips

2003

Solid State Communications

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The formation of "zero" (exponentially small) resistance states (ESRS) in high mobility two-dimensional electron systems (2DES) in a static magnetic field B and subjected to strong microwave (MW) radiation has attracted great theoretical interest. These states appear to be associated with a new kind of energy gap _. Here I show that the energy gap _ is explained by a microscopic quantum model that involves the Prime Number Theorem, hitherto reserved for only mathematical contexts. The model also contains the zeroes of the zeta function, and explains the physical origin of the Riemann hypothesis.Two experimental groups have discovered giant magnetoresistance oscillations associated with low-field cyclotron resonance in samples previously used to study quantum Hall effects. In very high mobility samples the minima of these oscillations correspond to exponentially small resistance [1][2][3] . There are many suggested analogies to explain this entirely unexpected phenomenon [1][2][3][4][5][6][7][8][9] . Photon-assisted formation of collective tunneling states between initial and final states involving multiquantum well (MQW) geometries is well known 10 . Theories predicted 11 dynamic localization and absolute negative conductance due to coherent tunneling in semiconductor superlattices subjected to ac electric fields nearly 20 years before a similar effect associated with sequential incoherent tunneling was observed 12. Many examples of this phenomenon are now

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Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

Cited by 658 publications

References 32 publications

Zero-Differential Resistance State of Two-Dimensional Electron Systems in Strong Magnetic Fields

Zero-Differential Resistance State of Two-Dimensional Electron Systems in Strong Magnetic Fields

Magnetoresistance in a high-mobility two-dimensional electron gas

Microscopic origin of collective exponentially small resistance states

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