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2004
DOI: 10.1016/j.physe.2003.11.204
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Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs Heterostructures

Abstract: We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, B, in the large filling factor limit. Vanishing resistance is observed in the vicinity of B = [4/(4j + 1)]B f , where* /e, where m * is the effective mass, e is the charge, and f is the microwave frequency. The dependence of the effect is reported as a function of f, the temperature, and the power.

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Cited by 106 publications
(79 citation statements)
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“…
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states [1][2][3] , and serve as the basis for fast transistors, research on electrons in nanostructures 4,5 , and prototypes of quantum-computing schemes 6 . All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns 7 .
…”
mentioning
confidence: 99%
“…
GaAs-based two-dimensional electron gases (2DEGs) show a wealth of remarkable electronic states [1][2][3] , and serve as the basis for fast transistors, research on electrons in nanostructures 4,5 , and prototypes of quantum-computing schemes 6 . All these uses depend on the extremely low levels of disorder in GaAs 2DEGs, with low-temperature mean free paths ranging from microns to hundreds of microns 7 .
…”
mentioning
confidence: 99%
“…Note that the additional term in the differential equation which provides g(B), is the factor (1/B) in the dominator of Equation (32). If this term does not exist, the differential equation has a simple form dB dT = B T and obtains the result previously discussed for the non-degenerate case.…”
Section: Depends On Three Variables S L ≡ S L (T B λ)mentioning
confidence: 66%
“…Thus, the electrons in GaAs are confined in a 1-D potential well of length L in the Z-direction. Therefore, electrons are trapped in 2D space, where a magnetic field along Z-axis can be applied [32].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, the electrons in GaAs are confined in a 1-D potential well of length L in the Z-direction. Therefore, electrons are trapped in 2D space, where a magnetic field along Z-axis can be applied [31].…”
Section: Of 15mentioning
confidence: 99%