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Robert, Jean-Louis; Raymond, André; Mulot, J Y; Bousquet, C.; Zawadzki, W.; Kubisa, M.; André, J.P.

doi:10.1103/physrevb.39.1832

Cited by 7 publications

(2 citation statements)

References 20 publications

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“…Also, when the magnetic field is fixed at a value corresponding to the center of the Hall plateaus, the longitudinal resistance R xx of Hall-bar conductors vanishes as long as the current does not exceed a critical value [1,2,3,4]. The plateau i = 2 is used in the metrological applications of the quantum Hall effect (QHE) to provide a very reproducible resistance standard.…”

Section: Introductionmentioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the i = 2 plateau which is used in all metrological measurements of the von Klitzing constant R K . A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the current and the magnetic field polarities. Several samples with different width have been studied and we observed that the critical current for the contact resistance increases with the width of the Hall bar as previously observed for the critical current of the longitudinal resistance. The critical currents exhibit either a linear or a sublinear increase. All our observations are interpreted in the current understanding of the Quantum hall effect brekdown. Our analysis suggests that a heated region appears at the current contact, develops and then extends in the whole sample while increasing the current. Consequently, we propose to use the contact resistance as an electronic thermometer for the Hall fluid.

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Section: Introductionmentioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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“…Experimentally we observe high – but finite – values of resistance in this regime (up to a few MΩ at v = 2). Hopping conduction through localized states at integer filling factor allows a non‐vanishing conductance in such geometry …”

Section: Electrochemical Capacitance Modelmentioning

confidence: 99%

Electrochemical Capacitance and Transit Time in Quantum Hall Conductors

Delgard

Chenaud

Mailly

et al. 2019

Physica Status Solidi (b)

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In a two dimensional electron gas, low energy transport in presence of a magnetic field occurs in chiral 1D channels located on the edge of the sample. In the AC description of quantum transport, the emittance determines the amplitude of the imaginary part of the admittance, whose sign and physical meaning are determined by the sample topology: a Hall bar is inductive while a Corbino ring is capacitive. In this article, the perfect capacitive character of Corbino samples in the quantum Hall effect regime is shown. A vanishing conductance and an electrochemical capacitance which depends on the density of states of 1D channels are measured. Our samples have no gate, neither on the side nor on the top, and the inner capacitances are measured. The transit time of electrons across the device is obtained and the drift velocity of carriers is deduced.

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