Zero power infrared sensing in 2D/3D-assembled heterogeneous graphene/In/InSe/Au

Abstract

Low- or self-powered infrared sensors can be used in a broad range of applications, including networking mobile edge devices and image recognition for autonomous driving technology. Here, we show state-of-the-art...

Self-powered and broadband opto-sensor with bionic visual adaptation function based on multilayer γ-InSe flakes

“…From the schematic side and top views of the γ-InSe flake, four atom sheets are covalently connected in each layer along the c-axis in the following order: Se-In-In-Se, forming a honeycomb-like In-Se lattice structure in the ab-plane. In a unit cell, the layered γ-InSe is made up of three layers that are stacked vertically and connected by weak Van der Waals force 29 , 30 . Meanwhile, the Se atoms of the second layer and the In atoms of the first layer are aligned with the In and Se atoms of the third layer, respectively.…”

High-Field Electron Transport and High Saturation Velocity in Multilayer Indium Selenide Transistors

“…Indium selenide (InSe), with its moderate band gap (∼1.2 eV) and high electron mobility (>1000 cm 2 /(V s) at RT), − has allowed the development of various applications, such as photodetectors, , sensors, , memory devices, , and logic circuits. , Here, we report the υ sat of high-mobility vdW InSe, exceeding ∼2.0 × 10 7 cm/s at RT, which is superior to those of other vdW semiconductors. The InSe is on a hexagonal boron nitride (hBN) substrate and encapsulated by a thin, noncontinuous layer of In, which protects the InSe. , Notably, υ sat of our InSe exhibits a 50–60% improvement in υ sat when cooled to 80 K, showing its merit for low-temperature RF transistors.…”

“…9,10 2D transition metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS 2 ) and tungsten disulfide (WS 2 ), show relatively low υ sat values of 3−6 × 10 6 and 3.8 × 10 6 cm/s, respectively, at RT, due to the high impurity scattering rates and corresponding low mobilities (generally <100 cm 2 /(V s)). 11−14 Indium selenide (InSe), with its moderate band gap (∼1.2 eV) 15 and high electron mobility (>1000 cm 2 /(V s) at RT), 15−17 has allowed the development of various applications, such as photodetectors, 18,19 sensors, 20,21 memory devices, 22,23 and logic circuits. 24,25 Here, we report the υ sat of high-mobility vdW InSe, exceeding ∼2.0 × 10 7 cm/s at RT, which is superior to those of other vdW semiconductors.…”