Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Zhao, Yi-Fan; Zhang, Ruoxi; Zhou, Ling-Jie; Mei, Ruobing; Yan, Zi-Jie; Chan, Moses H. W.; Liu, Chaoxing; Chang, Cui-Zu

doi:10.1103/physrevlett.128.216801

Cited by 23 publications

(22 citation statements)

References 40 publications

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“…Meanwhile, Ref. [67] presents the QAH effect persists in a Hall bar device with width 72 nm in three quintuple layers of Cr-doped (Bi,Sb) 2 Te 3 , four quintuple layers of (Bi,Sb) 2 Te 3 , and three quintuple layers of Cr-doped (Bi,Sb) 2 Te 3 [68,69], and they measured the transverse resistance and longitudinal resistance in Hall bar devices with width from 300 nm to 10 µm. Technologically, first, by using photolithography, the samples can be patterned into a Hall bar with width 10 µm [66,67].…”

Section: Discussionmentioning

confidence: 99%

Light-induced phase crossovers in a quantum spin Hall system

Qin,

Lee,

Chen

2022

Preprint

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In this work, we theoretically investigate the light-induced topological phases and finite-size crossovers in a paradigmatic quantum spin Hall (QSH) system with high-frequency pumping optics. Taking the HgTe quantum well for example, our numerical results show that circularly polarized light can break time-reversal symmetry and induce the quantum anomalous Hall (QAH) phase. In particular, the coupling between the edge states is spin dependent, and it is related not only to the size of the system but also to the strength of the polarized pumping optics. By tuning the two parameters (system width and optical pumping strength), we obtain four transport regimes, namely QSH, QAH, edge conducting, and normal insulator. These four different transport regimes have contrasting edge conducting properties which will feature prominently in transport experiments on various topological materials.

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Section: Discussionmentioning

confidence: 99%

Light-induced phase crossovers in a quantum spin Hall system

Qin,

Lee,

Chen

2022

Preprint

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“…3,8,24−42 Compared with the individual films, the QAH state in modulation-doped magnetic TI sandwiches [i.e., Crdoped (Bi, Sb) 2 Te 3 /(Bi, Sb) 2 Te 3 /Cr-doped (Bi, Sb) 2 Te 3 ] usually shows a higher critical temperature. 3,28,31,32 In real experiments, it is known that exposure to air shifts the chemical potential of the magnetically doped TI films/heterostructures. Since the size of the effective magnetic exchange gap is only a few meV (refs 3, 36, 45), the property of the QAH state is sensitive to ambient conditions.…”

mentioning

confidence: 99%

“…Since the size of the effective magnetic exchange gap is only a few meV (refs , , ), the property of the QAH state is sensitive to ambient conditions. To date, the QAH effect has been realized in magnetically doped TI thin films/heterostructures either without ,− or with − ,,− protection layers. The protection layers include amorphous Te ,− , and aluminum ,,, films grown by in situ molecular beam epitaxy (MBE) and an AlO x layer ,,− grown by ex situ atomic layer deposition (ALD).…”

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confidence: 99%

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Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators

et al. 2023

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The quantum anomalous Hall (QAH) insulator carries dissipation-free chiral edge current and thus provides a unique opportunity to develop energy-efficient transformative information technology. Despite promising advances, the QAH insulator has thus far eluded any practical applications. In addition to its low working temperature, the QAH state in magnetically doped topological insulators usually deteriorates with time in ambient conditions. In this work, we store three QAH devices with similar initial properties in different environments. The QAH device without a protection layer in air shows clear degradation and becomes hole-doped. The QAH device kept in an argon glovebox without a protection layer shows no measurable degradation after 560 h, and the device protected by a 3 nm AlO x protection layer in air shows minimal degradation with stable QAH properties. Our work shows a route to preserve the dissipation-free chiral edge state in QAH devices for potential applications in quantum information technology.

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“…Recently, significant progresses have been achieved to realize layered topologically magnetic systems [12][13][14][15][16][17][18]. In particular, the intrinsic antiferromagnetic (AFM) topological insulator (TI) MnBi 2 Te 4 has become a highly tunable platform to realize various of exotic topological phenomena due to the interplay between the Berry phase and its rich internal magnetic structures [19][20][21][22][23][24][25].…”

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confidence: 99%

Quantum Anomalous Layer Hall Effect in the Topological Magnet MnBi2Te4

Dai¹,

Li²,

Xu³

et al. 2022

Preprint

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Recently, a type of Hall effect due to an unusual layer-locked Berry curvature called the layer Hall effect (LHE) has been reported in the even-layered two-dimensional antiferromagnetic (AFM) MnBi2Te4 [A. Gao et.al, Nature 595, 521 (2021)]. In this work, we report that the quantization of LHE, which we call the quantum anomalous layer Hall effect (QALHE), can be realized in MnBi2Te4. The QALHE originates from kicking a layer-locked Berry-curvature monopole out of the Fermi sea by a vertical electric field. Remarkably, we demonstrate that the electric-field reversal can switch the sign of the quantized Hall conductance of QALHE in the even-layered AFM phase. The QALHE can also be realized in the ferromagnetic phase. These results provide a promising way toward the electric engineering of the Berry curvature monopoles and quantized-layered transport in topological magnets.

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Zero Magnetic Field Plateau Phase Transition in Higher Chern Number Quantum Anomalous Hall Insulators

Cited by 23 publications

References 40 publications

Light-induced phase crossovers in a quantum spin Hall system

Light-induced phase crossovers in a quantum spin Hall system

Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators

Quantum Anomalous Layer Hall Effect in the Topological Magnet MnBi2Te4

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