Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Lupina, L.; Zoellner, M. H.; Niermann, Tore; Dietrich, B.; Capellini, Giovanni; Thapa, S. B.; Haeberlen, M; Lehmann, Michael; Storck, P.; Schroeder, Thomas

doi:10.1063/1.4935856

Cited by 11 publications

(3 citation statements)

References 15 publications

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“…This has led to avenues for the use of ScN as a dislocation reduction buffer layer, and for in-situ ohmic contacts for GaN based devices [20] . Earlier studies have reported the growth of binary ScN thin films by reactive magnetron sputtering, hydride vapor phase epitaxy, and gas-source and plasma MBE on Si, Al2O3, SiC, and MgO surfaces [21][22][23][24][25][26][27][28][29] . Very few reports exist of ScN epitaxy on GaN [30] , and no results have yet been shown for growth on AlN.…”

mentioning

confidence: 99%

Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN

Casamento

Wright

Chaudhuri

et al. 2019

Applied Physics Letters

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RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane orientation instead of hexagonal orientation. For the first time, cubic (111) twinned patterns in ScN are observed by in-situ electron diffraction during epitaxy, and the twin domains in ScN are detected by electron backscattered diffraction, and further corroborated with X-ray diffraction. The epitaxial ScN films display very smooth, sub nanometer surface roughness at a growth temperature of 750C. Temperature-dependent Hall-effect measurements indicate a constant high n-type carrier concentration of ~1x10 20 /cm 3 and electron mobilities of ~ 20 cm 2 /Vs.

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mentioning

confidence: 99%

Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN

Casamento

Wright

Chaudhuri

et al. 2019

Applied Physics Letters

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“…Such metal/semiconductor metamaterials have demonstrated optical metamaterial properties and currently researched for thermionic energy conversion [37,38]. Similarly, because of their latticematched interface, (111) ScN interlayers have been used successfully to grow dislocation and defect-free (0001) GaN [39,40]. The high carrier concentration of ScN is further leveraged to excite low-loss and high-quality plasmon and phonon polaritons in the near and far infrared (IR) spectral ranges, respectively.…”

Section: Introductionmentioning

confidence: 99%

Demonstration of compensated n-type scandium nitride Schottky diodes

Rao¹,

Acharya²,

Saha³

2023

J. Phys. D: Appl. Phys.

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Scandium nitride is an emerging group III-B transition metal pnictide and has been studied extensively for its thermoelectric properties, as interlayers for defect-free GaN growth, in epitaxial metal/semiconductor superlattices, and recently for its polaritonic and optoelectronic synaptic functionalities. However, to realize the full potential of its semiconducting properties in electronic, thermionic, and optoelectronic device applications, it is necessary to develop Schottky diodes of ScN that are missing thus far. Here we show Schottky diodes of ScN with elemental metals such as silver (Ag) and gold (Au). As-deposited ScN thin films exhibit a high electron concentration in the (1-4) × 1020 cm-3 range due to unintentional oxygen doping. These excess electrons are compensated by Mg hole doping, leading to a wider depletion region at the metal/ScN interface for activated electronic transport. Current-voltage (I-V) characteristics show the rectification nature in ScN/Ag and ScN/Au diodes, and the barrier heights of 0.55± 0.05 eV and 0.53± 0.06 eV, respectively, are obtained. Interface annealing with time and temperature results in a slight increase in the forward junction potential. The capacitance-voltage (C-V) measurements also revealed the presence of interface trap states. The demonstration of Schottky diodes marks an important step in realizing the full potential of ScN in electronic, thermionic, and optoelectronic devices.

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“…The appearance of these stripelike crystals with specific orientations is likely due to the formation of twinned crystals during the heteroepitaxy growth, which has been observed in many organic or inorganic epitaxy growth process. 40,41 Additionally, the evolution from terraced to stripelike morphology also implies the existence of a certain lattice mismatch between TIPS-PEN and TIPS-TAP, which triggers various morphologies with increasing thicknesses due to the stress relief. Furthermore, this heteroepitaxy growth strategy is applicable to other materials such as dif-TES-ADT and C 8 -BTBT (Figure S7), indicative of the promising application of this strategy for constructing diverse heterostructures.…”

mentioning

confidence: 99%

Organic Heteroepitaxy Growth of High-Performance Responsive Thin Films with Solution Shearing Crystals as Templates

Lü

Wang

Xue

et al. 2022

ACS Materials Lett.

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Organic semiconductor thin films with the ability to efficiently respond to different stimuli have recently received tremendous attention. Both efficient charge transport and suitable microstructure are required to achieve high responsiveness. Herein, we report a heteroepitaxy strategy to fabricate highly aligned organic crystalline thin films with both high surface-to-volume ratio and excellent charge mobility. A solution-sheared one-dimensional crystalline film is first grown as a template, and the vacuum deposited active layer undergoes template-guided vertical heteroepitaxial growth, leading to the formation of the highly aligned morphology. A mobility as high as 2.9 cm2 V–1 s–1 with good air stability is achieved because of the highly oriented morphology and the passivation effect on surface traps by the template layer. Importantly, such structured films with high mobility exhibit excellent performance in UV light and gas detection. The strategy reported in the current study holds great promises in constructing highly responsive surfaces/interfaces.

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Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

Cited by 11 publications

References 15 publications

Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN

Molecular beam epitaxial growth of scandium nitride on hexagonal SiC, GaN, and AlN

Demonstration of compensated n-type scandium nitride Schottky diodes

Organic Heteroepitaxy Growth of High-Performance Responsive Thin Films with Solution Shearing Crystals as Templates

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