Zener Interminiband Resonant Breakdown in Superlattices

Sibille, Alain; Palmier, J.F.; Laruelle, François

doi:10.1103/physrevlett.80.4506

Cited by 77 publications

(50 citation statements)

References 21 publications

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“…The results of Sibille [10] for SLs with wider minibands are closest to ours. In that work the peculiarities of I-V curve were interpreted as resonant properties of interminiband tunneling in SLs.…”

Section: I-v Curves and Current Instabilitiessupporting

confidence: 89%

“…3 Inter-WSL effects in high-field transport 3.1 The peculiarities on I-V curves similar to shown in Fig. 3 were observed in [8][9][10]. In [8] it was established that the peaks were due to resonant tunneling of electrons between ground and excited energy states of neighboring wells [11] in electric fields F determined by condition E i − E j = meF d, here m is an integer, E i and E j are the energies of ith and jth energy levels, or the energies of "center of mass" of corresponding minibands.…”

Section: I-v Curves and Current Instabilitiessupporting

confidence: 65%

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Transport in narrow minigap superlattices with inter‐Wannier‐Stark level tunneling

Andronov

Dodin

Nozdrin

et al. 2008

Phys. Status Solidi (c)

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Low temperature electron transport under interminiband Zener tunneling and LO‐phonon scattering in the second and higher minibands in GaAs/Alx Ga1¡x As superlattices with weak barriers has been studied. At low electric fields multiple negative differential low‐frequency conductivity regions and effects of complicated electron transport have been found. In stronger fields peculiarities of current ‐ voltage curves attributed to resonant tunneling between Wannier‐Stark levels of different minibands have been separated basing on calculated wavefunctions and energies of the levels. Calculated value of optical matrix element for inter‐Wannier‐Stark transitions is promising to achieve negative conductivity at these transitions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: I-v Curves and Current Instabilitiessupporting

confidence: 89%

Section: I-v Curves and Current Instabilitiessupporting

confidence: 65%

Transport in narrow minigap superlattices with inter‐Wannier‐Stark level tunneling

Andronov

Dodin

Nozdrin

et al. 2008

Phys. Status Solidi (c)

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“…(197). (This might provide an interesting tool to investigate tunneling processes where tunneling occurs between wells separated by more than one barrier [62,127,126].) The same behavior is found in a miniband model containing higher Fourier components in the band structure [248].…”

Section: Discussionmentioning

confidence: 57%

Semiconductor superlattices: a model system for nonlinear transport

2002

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Electric transport in semiconductor superlattices is dominated by pronounced negative differential conductivity. In this report the standard transport theories for superlattices, i.e. miniband conduction, Wannier-Stark-hopping, and sequential tunneling, are reviewed in detail. Their relation to each other is clarified by a comparison with a quantum transport model based on nonequilibrium Green functions. It is demonstrated how the occurrence of negative differential conductivity causes inhomogeneous electric field distributions, yielding either a characteristic sawtooth shape of the current-voltage characteristic or self-sustained current oscillations. An additional ac-voltage in the THz range is included in the theory as well. The results display absolute negative conductance, photon-assisted tunneling, the possibility of gain, and a negative tunneling capacitance. 2 Notation and list of symbolsThroughout this work we consider a superlattice, which is grown in the z direction. Vectors within the (x, y) plane parallel to the interfaces are denoted by bold face letters k, r, while vectors in 3 dimensional space are r, k, . . . . All sums and integrals extend from −∞ to ∞ if not stated otherwise.The following relations are frequently used in this work and are given here for easy reference:

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“…[3][4][5] However, this type of gain is intrinsically connected with the negative differential conductivity in the current-field relation, so that the formation of field domains 6-9 strongly limits its observation and practical use. As an alternative, it was suggested 10 that gain can be present in the positive differential conductivity region of SLs where resonant tunneling over several barriers [11][12][13] is relevant. The idea is to operate the SL slightly below the tunneling resonance from the ground state of well µ to the excited state in the next-neighboring well µ + 2 (see the inset of FIG.…”

mentioning

confidence: 99%

Superlattice gain in positive differential conductivity region

2016

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We analyze theoretically a superlattice structure proposed by A. Andronov et al. [JETP Lett 102, 207 (2015)] to give Terahertz gain for an operation point with positive differential conductivity. Here we confirm the existence of gain and show that an optimized structure displays gain above 20 cm −1 at low temperatures, so that lasing may be observable. Comparing a variety of simulations, this gain is found to be strongly affected by elastic scattering. It is shown that the dephasing modifies the nature of the relevant states, so that the common analysis based on Wannier-Stark states is not reliable for a quantitative description of the gain in structures with extremely diagonal transitions.

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Zener Interminiband Resonant Breakdown in Superlattices

Cited by 77 publications

References 21 publications

Transport in narrow minigap superlattices with inter‐Wannier‐Stark level tunneling

Transport in narrow minigap superlattices with inter‐Wannier‐Stark level tunneling

Semiconductor superlattices: a model system for nonlinear transport

Superlattice gain in positive differential conductivity region

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