Zeeman splitting and spin dynamics tuning by exciton charging in two-dimensional systems

Castelano, L. K.; Cesar, Daniel Ferreira; López‐Richard, V.; Marques, G. E.; Couto, O. D. D.; Iikawa, F.; Hey, R.; Santos, P. V.

doi:10.1103/physrevb.84.205332

Cited by 16 publications

(16 citation statements)

References 23 publications

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“…At higher fields, a marked slowdown is observed. We then infer that the g-factor of holes is not constant with magnetic field, as found also in other semiconductor systems, 45,46 provided that the electron g-factor is independent of B, as indicated by gray circles.…”

Section: T H I S C O N T E N T Isupporting

confidence: 55%

Magneto-Optical Properties of Wurtzite-Phase InP Nanowires

et al. 2014

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The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III-V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III-V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μ exc) and g-factor (g exc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μ exc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |ge| = 1.4 for B⊥ĉ (where ge is the electron g-factor) and g exc = |ge - gh,//| = 3.5 for B//ĉ (where gh,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.

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Section: T H I S C O N T E N T Isupporting

confidence: 55%

Magneto-Optical Properties of Wurtzite-Phase InP Nanowires

et al. 2014

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“…The ratio s s /s was set to 0.1 that is reasonable for QWs of this size. 38 Note in this case that despite the monotonic variation of the Zeeman splitting described before as a function of the structural parameters (strain and aspect ratio of the confined state), the DSP for holes in Fig. 13 follows very flat behaviors at T ¼ 2 K below and above the critical parameter region (e jj $ 0:5 in Fig.…”

Section: Resultsmentioning

confidence: 68%

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

Lopes-Oliveira

Herval

Gordo

et al. 2014

Journal of Applied Physics

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Articles you may be interested inEffects of a nearby Mn delta layer on the optical properties of an InGaAs/GaAs quantum well Energy dependence of electron effective mass and effect of wave function confinement in a nanoscale In0.53Ga0.47As/In0.52Al0.48As quantum wellWe investigated effects of localization and strain on the optical and magneto-optical properties of diluted nitrogen III-V quantum wells theoretically and experimentally. High-resolution x-ray diffraction, photoluminescence (PL), and magneto-PL measurements under high magnetic fields up to 15 T were performed at low temperatures. Bir-Pikus Hamiltonian formalism was used to study the influence of strain, confinement, and localization effects. The circularly polarized magneto-PL was interpreted considering localization aspects in the valence band ground state. An anomalous behavior of the electron-hole pair magnetic shift was observed at low magnetic fields, ascribed to the increase in the exciton reduced mass due to the negative effective mass of the valence band ground state. V C 2014 AIP Publishing LLC. [http://dx.

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“…10,12,20 Both |−3/2,n = −1 h and |3/2,n = 2 h states are primarily heavy-hole character at low magnetic fields. 10,21 The off-diagonal (N e = N h ) transitions are induced by the mixing of the Landau-levels and by the impurity scattering. The diagonal (N e = N h ) transitions are also observed in LL1 in some cases at 0.48 B 0.60 T in Fig.…”

Section: Resultsmentioning

confidence: 99%

Exchange energy enhancedg-factors obtained from Landau fan diagrams at low magnetic fields

et al. 2013

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We report on measurement of the electron-hole effective g-factors (g * eff ) depending on electron filling factors ν from magnetophotoluminescence spectroscopy at low magnetic fields B < 1 T in low electron density regime in a GaAs/Al 0.33 Ga 0.67 As-gated quantum well. Enhancement of g * eff at odd ν is observed. The oscillatory behavior of g * eff is compared with results of a theory that takes into account the lowest-order exchange interaction of the screened Coulomb interaction. Good agreement of the observed g * eff with theoretical results is obtained except ν at around 3. The enhancement of g * eff at even ν with decrease in electron density has not been observed.

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Zeeman splitting and spin dynamics tuning by exciton charging in two-dimensional systems

Cited by 16 publications

References 23 publications

Magneto-Optical Properties of Wurtzite-Phase InP Nanowires

Magneto-Optical Properties of Wurtzite-Phase InP Nanowires

Strain and localization effects in InGaAs(N) quantum wells: Tuning the magnetic response

Exchange energy enhancedg-factors obtained from Landau fan diagrams at low magnetic fields

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