2019
DOI: 10.1002/adom.v7.8
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Cited by 14 publications
(12 citation statements)
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“…Furthermore, the strong SOC interactions induced energy level splitting of the Bi 6p states will give rise to the decrease of the CBM position and the reduction of the band gap. Replacing Cl by I significantly lower the CBM and raise the VBM due to the interaction between Bi 3+ and I ions, [11] resulting in the band gap shrinkage from 3.41 eV (Cs 2 NaBiCl 6 ) [29] to 1.66 eV (Cs 2 NaBiI 6 ). [31] The mobility of the carriers is one key parameter for optoelectronic applications.…”
Section: Electronic Structure and Optical Propertiesmentioning
confidence: 99%
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“…Furthermore, the strong SOC interactions induced energy level splitting of the Bi 6p states will give rise to the decrease of the CBM position and the reduction of the band gap. Replacing Cl by I significantly lower the CBM and raise the VBM due to the interaction between Bi 3+ and I ions, [11] resulting in the band gap shrinkage from 3.41 eV (Cs 2 NaBiCl 6 ) [29] to 1.66 eV (Cs 2 NaBiI 6 ). [31] The mobility of the carriers is one key parameter for optoelectronic applications.…”
Section: Electronic Structure and Optical Propertiesmentioning
confidence: 99%
“…[24][25][26] Alternatively, Cs 2 NaBiCl 6 possesses an indirect band gap of 3.41 eV and shows adjustably photoelectric properties by various ion doping. [27][28][29][30] A bright orange-red phosphor has been achieved by doping Mn 2+ ions into Cs 2 NaBiCl 6 host, and a red shift of the optical absorption and excitation spectra has been observed through further chemical substitution of Cl − ions with Br − ions. [28] The indirect band gap can change to direct one by gradual substitution of Bi 3+ with In 3+ in Cs 2 NaBiCl 6 , and a strong orange-yellow photoluminescence was observed when doped with Mn 2+ , and can be manipulated by the Bi 3+ /In 3+ ratios.…”
Section: Introductionmentioning
confidence: 99%
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“…Recently, bubbles of monolayer or few layers 2D materials are created via various method and investigated in physics, chemistry, and devices. [1,5,16,17] A biaxial strain in bubbles can cause the direct-to-indirect band gap transition of few-layer TMDCs. [18] Strain localization excitons states formed a doughnut-like pattern around the nanoscale bubbles of monolayer WSe 2 and MoS 2 at room temperature.…”
Section: Introductionmentioning
confidence: 99%
“…Photoluminescence (PL) and Raman spectra oscillations can be found across graphene, monolayer WS 2 , and few layer WSe 2 bubble profile due to light interference. [1,11,16] In addition, PL of monolayer WS 2 is sensitive with strain, electric filed, and temperature. Monolayer WS 2 has a potential application for photodetectors due to strong PL with narrower emission bandwidth.…”
Section: Introductionmentioning
confidence: 99%