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Czeremuszkin, G.; Latreche, Mohamed E. H.; Wertheimer, M. R.; Sobrinho, Argemiro Soares da Silva

doi:10.1023/a:1011308919705

Cited by 82 publications

(43 citation statements)

References 4 publications

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“…Finally, the minimized band II along with an enhanced absorbance of bands III and/or I correlates with a high content of the inorganic components Si(ÀO) 4 and Si(ÀO) 3 . Herewith, the band III has a high potential as a marker for dense SiO 2 -like films, while the information obtained from band I should be discussed with regard to its spectral shift.…”

Section: Resultsmentioning

confidence: 88%

“…The decrease in the constitution component Si(ÀO) 2 correlates with the decrease in the absorbance of band II (Figure 4b). Therefore, the relative maximum of the ratio (Si(ÀO) 3 (Figure 4b) is characterized by the dominance of band III at the minimal absorbance of band II. Moreover, the component Si(ÀO) 3 , too, reaches maximal values at minimal absorbance of band I (Figure 4c).…”

Section: Resultsmentioning

confidence: 98%

“…Therefore, the relative maximum of the ratio (Si(ÀO) 3 (Figure 4b) is characterized by the dominance of band III at the minimal absorbance of band II. Moreover, the component Si(ÀO) 3 , too, reaches maximal values at minimal absorbance of band I (Figure 4c). Nevertheless, the content of Si(ÀO) 4 is not exclusively related to the absorbance of band III, because the width of the total absorbance of the SiO region is (bands I þ II þ III) is responsible for the increase of Si(ÀO) 4 (Figure 4d).…”

Section: Resultsmentioning

confidence: 98%

“…The absolute amount of amorphous carbon reaches maximal 5% of atoms (excluding hydrogen atoms) and no absorption of SiÀCH 3 , CH 3 and CH 2 groups is observed in the FT-IR spectrum. Moreover, the central position of band II allows to draw conclusions on the bonding angle in the OSiO structure.…”

Section: Discussionmentioning

confidence: 97%

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Chemical Composition of SiO_x Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Schäfer

Foest

Quade

et al. 2009

Plasma Processes & Polymers

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SiOx films are deposited with an APPJ (27 MHz) using Ar, O2 and OMCTS [Si4O4(CH3)8]. An experimental study on the influence of the O2 versus OMCTS concentration on the chemical composition of the films and their radial gradients over the static deposition profile is carried out by means of XPS and ATR‐FT‐IR. The films are characterized by dominating SiO IR absorption and the absence of CH2 and CH3 bands, indicating the inorganic SiOx character. From the absorbance differences of the three SiO IR bands present in the spectra, the existence of different structural phases is derived. Over the examined parameter field, three different structural phases are distinguished. Their occurrence can be seen as a marker for the film quality and allows formulating optimal deposition conditions for defined structures of organosilicon films.

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Section: Resultsmentioning

confidence: 88%

Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 98%

Section: Discussionmentioning

confidence: 97%

See 2 more Smart Citations

Chemical Composition of SiO_x Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Schäfer

Foest

Quade

et al. 2009

Plasma Processes & Polymers

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“…[15] R2R, also known as web processing, is a high volume manufacturing method that can exploit the beneficial attributes of flexible substrates and enable the development of new technologies. [16][17][18][19][20][21][22] Practice has shown that there is a significant manufacturing cost advantage of converting a batch process to a R2R process for selected applications. In this regard, effective R2R manufacturing tools and process technologies are currently appearing on the market.…”

Section: Introductionmentioning

confidence: 99%

Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon Carbide Barrier Technology for Protection from Detrimental Gases

Zambov

Shamamian

Weidner

et al. 2011

Chemical Vapor Deposition

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The demand for low-cost transparent gas and moisture barrier materials initiates many activities in the area of roll-to-roll (R2R), CVD, thin film technology. The present article is an overview on the elaboration of plasma-enhanced (PE)CVD technology for R2R manufacturing of amorphous silicon carbide (SiC) barrier coatings applied on polymers. A prototype R2R PECVD reactor is designed and built for uniform coatings deposition on large area web-substrates. A key feature is the incorporation of the Penning discharge plasma source (PDPS) to provide magnetically confined, high-density plasma (HDP) with no excessive heat. Coatings are grown on a variety of polymer substrates using trimethylsilane ((CH 3 ) 3 SiH) as the main organic precursor for delivery of active SiÀC species in the gas phase during deposition. A variety of analytical techniques are utilized to correlate process operating factors and plasma chemistry with coating composition and properties, in particular with the barrier performance and durability of barrier coated films (BCFs). The developed R2R PECVD technology demonstrates significant achievements in barrier performance with water vapor transmission rate (WVTR) of less than 5 Â 10 À4 g m À2 day À1and durability of BCFs for more than 500 h under damp-heat conditions of 85 8C and 85% relative humidity (RH). Manufactured BCFs can be competitively implemented for protection against detrimental gasses in various applications, such as drug and food packaging, and flexible electronic devices, such as thin film batteries and solar cells, liquid-crystal (LCD), and light-emitting diode (LED) displays.

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Plasma Processing of Polymers

Milella

2008

Encyclopedia of Polymer Science and Technology

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Since the late 1960s when low‐pressure plasmas started to be widely investigated for the etching of silicon in microelectronics, an enormous interest has grown in the plasma processing of polymers. Plasmas allow to modify the surface of materials without altering their bulk. The uniqueness is related to the fact that they permit a continuous variation of the chemical composition of the treated surfaces and, in turn, of their structure and properties in a very broad range. This review provides a survey of the range of applications for plasmas to the processing of polymers, along with some fundamental aspects of nonequilibrium plasmas.

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Cited by 82 publications

References 4 publications

Chemical Composition of SiO_x Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Chemical Composition of SiO_x Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon Carbide Barrier Technology for Protection from Detrimental Gases

Plasma Processing of Polymers

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Untitled

Cited by 82 publications

References 4 publications

Chemical Composition of SiOx Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Chemical Composition of SiOx Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Advanced Roll‐to‐Roll Plasma‐Enhanced CVD Silicon Carbide Barrier Technology for Protection from Detrimental Gases

Plasma Processing of Polymers

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Product

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Chemical Composition of SiO_x Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)

Chemical Composition of SiO_x Films Deposited by an Atmospheric Pressure Plasma Jet (APPJ)