Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence

Julkarnain, M.; Kamata, Norihiko; Fukuda, Tsuguo; Arakawa, Yasuhiko

doi:10.1016/j.optmat.2016.09.003

Cited by 34 publications

(16 citation statements)

References 66 publications

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“…In this study, the YL band of GaN exhibited a peak at 540 nm (2.3 eV), which can be ascribed to the Ga vacancies (V Ga ) point defects [41,42]. For carrier recombination through defect states in undoped GaN films, considerable research has been conducted on the origin of YL emissions, and a model of carrier transition from the shallow donor to the deep acceptor levels was established and studied [43]. Moreover, recent investigations have proposed that the YL emission in GaN films can be due to a V Ga -O N , single C N defect, or C N-O N compound [44][45][46].…”

Section: Resultsmentioning

confidence: 99%

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

2019

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We deposited 300-nm-thick GaN films on an amorphous glass substrate at a substrate temperature of 300 °C by using pulsed direct current (DC) sputtering. A ZnO buffer layer was utilized to improve the crystalline quality of the GaN films. Scanning electron microscopy results showed that the GaN thin films were grown along the c-axis and possessed a columnar structure. Atomic force microscopy results revealed that the GaN film deposited at a sputtering power of 75 W had the maximum grain size (24.1 nm). Room-temperature photoluminescence measurement of the GaN films indicated an ultraviolet near-band-edge emission at 365 nm and a Zn impurity energy transition level at 430 nm. In addition, X-ray diffraction conducted on the GaN films revealed a predominant (002) hexagonal wurtzite structure. The GaN film deposited at the sputtering power of 75 W demonstrated a high optical transmittance level of 88.5% in the wavelength range of 400–1100 nm. The material characteristics of the GaN films and ZnO buffer layer were studied using cross-sectional high-resolution transmission electron microscopy. The deposition of GaN films by using pulsed DC magnetron sputtering can result in high material quality and has high potential for realizing GaN-related optoelectronic devices on glass substrates.

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Section: Resultsmentioning

confidence: 99%

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

2019

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“…Meanwhile, the yellow luminescence at 550 nm is increased as the irradiation fluence increases up to 1.32×10 16 cm -2 . The yellow luminescence comes from the recombination from shallow donor to deep states [10]. The electron irradiation leads to formation of various defects such as vacancies causing the appearance of deep defect levels in the bandgap [11].…”

Section: Methodsmentioning

confidence: 99%

Optical tweezer system with no fluorescent confocal microscope for trapping colloidal nanoparticles

Hedzir¹,

Sallehuddin²,

Saidin³

et al. 2018

Ukr. J. Phys. Opt.

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We analyze the influence of electron irradiation on the electroluminescence spectra of white light emitting diodes (LEDs) based on indium gallium nitride. Three different irradiation fluences, 9.90×10 15 , 1.32×10 16 and 1.98×10 16 cm -2 , are studied. For all 27 samples of LEDs of the commercially available models VAOL-5GWY4, VAOL-10GWY4 and OVL-3321, we observe a significant decrease in the emission light intensity after the irradiation. Degradation of the overall light intensity is believed to be due to irradiation-induced defects which act as nonradiative recombination centres. We also study the emission intensities and the central wavelengths of the LED samples subjected to electron irradiation under conditions of different injection currents. After irradiation with the fluence 1.98×10 16 cm -2 , the blue peak located at 453 nm experiences severe degradation, so that only the yellow luminescence at 590 nm remains. This yellow band is related to radiative transitions from donor bands to the levels associated with gallium vacancies.

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“…Vacancy complexes with oxygen (V Ga -O N ) or silicon (V Ga -Si Ga ) might be responsible for YG luminescence. Additionally, C N -O N technological defects may also be a reason for YG luminescence [54]. It seems that Ga vacancies are most probable non-radiative recombination centres.…”

Section: Evolution Of the Photoluminescence Spectramentioning

confidence: 99%

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

Pavlov

Čeponis

Deveikis

et al. 2020

physics

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In this work, pulsed photoionization as well as photoluminescence and positron annihilation spectroscopy were combined to detect different species of defects. The GaN crystals, grown by the ammono-thermal method, doped with Mn as well as Mg impurities and irradiated with different fluences of reactor neutrons, were examined to clarify the role of the technological and radiation defects. The evolution of the prevailing photoactive centres was examined by pulsed photoionization spectroscopy. Positron annihilation spectroscopy was applied to reveal vacancy-type defects.

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Yellow luminescence band in undoped GaN revealed by two-wavelength excited photoluminescence

Cited by 34 publications

References 66 publications

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

Growth of GaN Thin Film on Amorphous Glass Substrate by Direct-Current Pulse Sputtering Deposition Technique

Optical tweezer system with no fluorescent confocal microscope for trapping colloidal nanoparticles

Spectroscopy of defects in neutron irradiated ammono-thermal GaN by combining photoionization, photoluminescence and positron annihilation techniques

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