Yellow Emission from Zinc Oxide giving an Electron Spin Resonance Signal at g=1.96

Ohashi, Naoki; Nakata, Tomokazu; Sekiguchi, Takashi; Hosono, Hideo; Mizuguchi, Masafumi; Tsurumi, Takaaki; Tanaka, Junzo; Haneda, Hajime

doi:10.1143/jjap.38.l113

Cited by 45 publications

(29 citation statements)

References 7 publications

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“…30 A yellow emission band was detected in pulsed laser deposited ZnO 31 and in ZnO:Al prepared by solid-state reactions. 32 A red emission band was detected in spray pyrolysis deposited ZnO 33 and in ZnO singlecrystals implanted, at 475°C, with Li, Na, N, P and Ne ions. 34 These emissions are mainly due to native (or intrinsic) defects, including vacancies, interstitials and anti-sites.…”

Section: Introductionmentioning

confidence: 97%

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bouanane

Kabir

Boulainine

et al. 2016

Journal of Elec Materi

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Zinc oxide thin films were prepared by thermal oxidation of zinc films at a temperature of 500°C for 2 h. The Zn films were deposited onto glass substrates by magnetron RF sputtering. The sputtering time varied from 2.5 min to 15 min. The physico-chemical characterization of the ZnO films was carried out depending on the Zn sputtering time. According to x-ray diffraction, ZnO films were polycrystalline and the Zn-ZnO phase transformation was direct. The mean transmittance of the ZnO films was around 80% and the band gap increased from 3.15 eV to 3.35 eV. Photoluminescence spectra show ultraviolet, visible, and infrared emission bands. The increase of the UV emission band was correlated with the improvement of the crystalline quality of the ZnO films. The concentration of native defects was found to decrease with increasing Zn sputtering time. The decrease of the electrical resistivity as a function of Zn sputtering time was linked to extrinsic hydrogen-related defects.

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Section: Introductionmentioning

confidence: 97%

Characterization of ZnO Thin Films Prepared by Thermal Oxidation of Zn

Bouanane

Kabir

Boulainine

et al. 2016

Journal of Elec Materi

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“…For example, the EPR signal of g = 1.96 was attributed to oxygen vacancy, 10 but some others argued that the oxygen vacancy signal was at g = 1.99. 11 The green luminescence at about 2.4 eV was correlated with oxygen vacancy by many researchers, [12][13][14][15] but it was also attributed to other defects such as V Zn , 16,17 Zn i , 18,19 O Zn , 20,21 and even Cu impurities. 22 DLTS revealed a major defect level L2 at E c − 0.3 eV in the as-grown ZnO, but the assignment of this level is also rather difficult.…”

Section: Introductionmentioning

confidence: 99%

Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation

et al. 2007

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Vacancy-type defects in as-grown ZnO single crystals have been identified using positron annihilation spectroscopy. The grown-in defects are supposed to be zinc vacancy ͑V Zn ͒-related defects, and can be easily removed by annealing above 600°C. V Zn -related defects are also introduced in ZnO when subjected to 3 MeV electron irradiation with a dose of 5.5ϫ 10 18 cm −2 . Most of these irradiation-induced V Zn are annealed at temperatures below 200°C through recombination with the close interstitials. However, after annealing at around 400°C, secondary defects are generated. A detailed analysis of the Doppler broadening measurements indicates that the irradiation introduced defects and the annealing induced secondary defects belong to different species. It is also found that positron trapping by these two defects has different temperature dependences. The probable candidates for the secondary defects are tentatively discussed in combination with Raman scattering studies. After annealing at 700°C, all the vacancy defects are annealed out. Cathodoluminescence measurements show that V Zn is not related to the visible emission at 2.3 eV in ZnO, but would rather act as nonradiative recombination centers.

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“…Since these emissions are located in a wide range of visible spectrum, great efforts have been made to tailor these visible emissions. It is found that doping ZnO with Li [11][12][13] or Al [14] leads to the yellow luminescence. Other dopants, including Mg [15], W [16], V [16], Eu [17] and Er [18], have been also investigated.…”

Section: Introductionmentioning

confidence: 99%