Yellow and red luminescence in Mg-implanted GaN epitaxial films

The annealing effects of V-doped GaN thin films grown by MOCVD

“…The decrease in the intensity of the blue luminescence after annealing for our GaN:V layers may be due to the dissociation of the complex responsible for this luminescence involving V Ga (example: V Ga -V N ). Indeed, an annealing temperature above 800 1C causes the dissociation of this type of complex [18,19]. For Mn implanted GaN layers, Majid et al [18] observed a disappearance of the blue band after annealing at 850 1C with an emergence of a peak related to oxygen.…”