1990
DOI: 10.1063/1.104238
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Y1Ba2Cu3O7−x thin films grown on sapphire with epitaxial MgO buffer layers

Abstract: We have developed a process for growing as-deposited Y1Ba2Cu3O7−x (YBCO) thin films on R-plane sapphire substrates with an intermediate layer of epitaxial MgO. The orientation of the layers has YBCO (001) parallel to MgO (100) which is parallel to the substrate normal. These films are superconducting by 88.5 K and exhibit Jc=1×106 A/cm2 at 77 K and 2.5×107 A/cm2 at 4.2 K. The MgO layers may be grown at temperatures as low as 370 °C and are very stable in air. Little or no diffusion occurs between the substrate… Show more

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Cited by 93 publications
(22 citation statements)
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“…Since it is a prototypical ionic insulator with a wide band gap, motivation is high to grow MgO films on a conductive substrate useful for charged-particle measurement, in addition to the applications mentioned above. Moreover, the usefulness of MgO films as buffer layers for the growth of high T c superconducting [5], and ferroelectric [6,7] films has led to an increased interest in the growth of this material. The most important point in these applications is the preparations of highly (100) oriented MgO thin films that can prevent inter-diffusion between the superconducting films and substrate and solve chemical reactivity at higher temperatures [8].…”
Section: Introductionmentioning
confidence: 99%
“…Since it is a prototypical ionic insulator with a wide band gap, motivation is high to grow MgO films on a conductive substrate useful for charged-particle measurement, in addition to the applications mentioned above. Moreover, the usefulness of MgO films as buffer layers for the growth of high T c superconducting [5], and ferroelectric [6,7] films has led to an increased interest in the growth of this material. The most important point in these applications is the preparations of highly (100) oriented MgO thin films that can prevent inter-diffusion between the superconducting films and substrate and solve chemical reactivity at higher temperatures [8].…”
Section: Introductionmentioning
confidence: 99%
“…x. The exact value for the critical angle of total reflection 0, can be used to determine the mass density p of a deposited film14 @,=A (7) and where N , is the Avogadro constant, ro is the classical electron radius, ( Z +f') is the atomic scattering factor, and A is the atomic weight.…”
Section: F(l) = As(l)fd(l)mentioning
confidence: 99%
“…In addition, buffer layers are sometimes used to prevent interdiffusion between YBa 2 Cu 3 O 7 À d and the reactive substrate [2]. Various buffer layers have been used including yttria-stabilized zirconia (YSZ) [3], MgAl 2 O 4 , SrTiO 3 [4], MgO [5], etc.…”
Section: Introductionmentioning
confidence: 99%