Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

Fricke, J.; Klehr, A.; Brox, O.; John, W.; Ginolas, A.; Ressel, P.; Weixelbaum, L.; Erbert, G.

doi:10.1088/0268-1242/28/3/035009

Cited by 17 publications

(6 citation statements)

References 21 publications

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“…[15,21] The monolithic diode laser has a total size of 3.0 mm × 0.5 mm. Two separate 500-μm long higher order DBR gratings [22] are implemented on the rear side of the device as wavelength selective mirrors and are designed to provide two emission lines with a spectral spacing of about 10 cm −1 at 785 nm. The spatial distance between the DBR gratings is 80 μm.…”

Section: Dual-wavelength Diode Laser At 785 Nmmentioning

confidence: 99%

Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual‐wavelength diode laser at 785 nm

Maiwald

Tränkle

2018

J Raman Spectroscopy

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In this paper, we present rapid and adjustable shifted excitation Raman difference spectroscopy (SERDS). A dual-wavelength diode laser emitting at 785 nm is used as the excitation light source. Two laser resonators are realized in a single chip, and two distributed Bragg reflector gratings provide two excitation lines at 785 nm. For each laser line, an optical power of 170 mW is achieved. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.

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Section: Dual-wavelength Diode Laser At 785 Nmmentioning

confidence: 99%

Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual‐wavelength diode laser at 785 nm

Maiwald

Tränkle

2018

J Raman Spectroscopy

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“…Thus low radiation losses can be achieved without utilizing submicron lithography and etching of narrow and deep slits. More details on the fabrication of the gratings to achieve the needed sidewall angles of the grooves and the ridge waveguide can be found in [4] and [15], respectively. The continuous wave (CW) electro-optical characteristics and the optical spectra of a DFB RW laser with a cavity length L = 4 mm, ridge width W = 5 µm and Bragg order N = 80 are shown in Figs.…”

Section: A Ridge Waveguide Lasermentioning

confidence: 99%

High-Power Distributed Feedback Lasers With Surface Gratings: Theory and Experiment

Wenzel

Fricke

Decker

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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Semiconductor lasers with integrated surface gratings are known to operate with narrow spectra as well as high power and efficiency. In this paper we present a theoretical description of DFB lasers with 80th-order waveguide gratings, fabricated by etching narrow grooves into the epitaxial layer structure. The passive gratings are simulated by mode expansion and S-matrix algorithm yielding the reflection and transmission matrices in dependence on wavelength for given parameters of the grating, such as residual layer thickness and width of the grooves. The lasing condition is solved by constructing a roundtrip operator and singular-value deposition for the calculation of lasing wavelength and threshold gain. A fast simulation of DFB lasers is performed within the framework of coupled-wave theory using adapted coupling coefficients. GaAs based ridgewaveguide and narrow-stripe broad-area lasers with integrated surface gratings are experimentally shown to emit output powers of 0.6 W into a single spectral line (∆λFWHM < 30 pm) and > 5 W into a spectrum with width ∆λ 95% ≈ 0.8 nm, respectively.1077-260X (c)

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“…Additionally, a flexible choice of the excitation power is preferred to avoid sample heating and photo-induced damage of sensitive samples. Dual-wavelength DBR and DFB diode lasers with an integrated Y-branch section to couple the laser light into a common laser section for wavelength-division multiplexing and THz-generation have been presented [8]- [11]. More than 1 W optical power with a frequency difference in the THz range has been realized using a tapered diode amplifier in an external cavity configuration by Chi et al [12].…”

Section: Introductionmentioning

confidence: 99%

Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm

Maiwald

Klehr

Sumpf

et al. 2014

IEEE Photon. Technol. Lett.

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A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector Y-branch diode laser as a dual-wavelength MO and a ridge waveguide PA. The system reaches an optical output power of more than 750 mW at 25°C. Optical spectra show wavelength stabilized single mode emission at 784.60 and 785.22 nm over the whole power range with a spectral width ≤10 pm (≤0.5 cm −1 ) and a spectral distance of 0.62 nm (≤10.1 cm −1 ).Index Terms-Diode lasers, semiconductor lasers, DBR, Y-branch, Raman spectroscopy, shifted excitation Raman difference spectroscopy, SERDS, 785 nm.

show abstract

Y-branch coupled DFB-lasers based on high-order Bragg gratings for wavelength stabilization

Cited by 17 publications

References 21 publications

Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual‐wavelength diode laser at 785 nm

Rapid and adjustable shifted excitation Raman difference spectroscopy using a dual‐wavelength diode laser at 785 nm

High-Power Distributed Feedback Lasers With Surface Gratings: Theory and Experiment

Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm

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