XXI. <i>On the positive ionization from certain hot salts, together with some observations on the electrical properties of molybdenite at high temperatures</i>

Waterman, Alan T.

doi:10.1080/14786440308635634

Cited by 13 publications

(4 citation statements)

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“…In the case of devices more readily CMOS compatible, the present record for switching cycles is 10 6 for SiO x with platinum and molybdenum electrodes [70]. In this study, the authors reported that one of the keys to achieving large numbers of cycles was the use of short programming pulses (1 µs or shorter).…”

Section: Switching Endurancementioning

confidence: 93%

“…Around this time, the field of Ovonics, the study of phase-change resistive switching in semiconducting glasses was established [4,5], building on previous early work by Waterman on electrical switching in certain metal salts subject to heating [6]. This paved the way for much of what is now referred to as phase-change memory technology, still primarily based on chalcogenides, and more specifically on variants of Ge 2 Sb 2 Te 5 .…”

Section: Introductionmentioning

confidence: 98%

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Resistive Switching in Oxides

Mehonić¹,

Kenyon²

2015

Defects at Oxide Surfaces

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Resistive switching in oxides, the phenomenon whereby the resistance of samples of the matrix can be cycled between states with contrasts of up to several orders of magnitude, has received growing attention over the past decade thanks to the possibility of exploiting this effect in novel memory technologies. Here we summarise the current state of the art in the field, paying particular attention to the underlying mechanisms of switching, which involves the creation of defects in the oxide. We also describe potential technological applications. IntroductionRecent years have seen a rapid growth of interest in materials whose electrical resistance can be changed by the application of an electric field. Of course, the phenomenon of irreversible electrical breakdown (so-called "hard breakdown") in oxides has long been studied as a failure mechanism in microelectronics-initially in capacitors and high voltage devices, then in thin films in integrated microelectronics-and, as such, is of great interest to industry as a problem to be mitigated. However, the resistive switching we refer to here is a reversible process whereby material can be cycled between two or more resistance states many times, enabling non-volatile memory technologies. Because of the range of potential technological applications-from replacements for existing technologies such as flash, to novel neuromorphic (neuron-mimicking) systems-resistive switching is now seen as an opportunity rather than a problem, and academic and industrial interest has grown to the point at which there are several hundred publications per year on all aspects of resistive switching materials and devices. Although we will not discuss fundamental issues associated with defect formation on oxides, these can be found in other chapters in the volume.

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Section: Switching Endurancementioning

confidence: 93%

Section: Introductionmentioning

confidence: 98%

Resistive Switching in Oxides

Mehonić¹,

Kenyon²

2015

Defects at Oxide Surfaces

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“…While Ovshinsky [12] is generally credited as the inventor of phase change materials for information storage, the discovery of phase changing electrical characteristics dates back to the early 1900 s in the little known and seldom cited pioneering work of Alan Tower Waterman. While studying thermionic emission of certain hot salts [20], Waterman observed a large negative coefficient of resistance of the molybdenum disulphide (MoS 2 ) with respect to temperature. More significantly, he observed a breakdown in resistivity characteristic when the device under test was heated by means of the electric current.…”

Section: History and Origin Of Phase Change Materials (Gst) And Its A...mentioning

confidence: 99%

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

et al. 2023

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Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

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“…The discovery of phase change material (PCM) starts from the early 1900s in the work of Alan Tower Waterman of Yale University [1]. While studying thermionic emission of certain hot salts, Waterman noted some peculiarities in the conductivity of molybdenite (MoS 2 ).…”

Section: Introductionmentioning

confidence: 99%

Introductory Chapter: Phase Change Material

Mhadhbi¹

2018

Phase Change Materials and Their Applications

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XXI. On the positive ionization from certain hot salts, together with some observations on the electrical properties of molybdenite at high temperatures

Cited by 13 publications

References 1 publication

Resistive Switching in Oxides

Resistive Switching in Oxides

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Introductory Chapter: Phase Change Material

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