XRD studies of an electrochemically co-deposited Cu–Zn–Sn precursor and formation of a Cu2ZnSnSe4 absorber for thin-film solar cells

Juškėnas, Remigijus; Niaura, Gediminas; Mockus, Z.; Kanapeckaitė, S.; Giraitis, Raimondas; Kondrotas, Rokas; Naujokaitis, Arnas; Stalnionis, G.; Pakštas, Vidas; Karpavičienė, V.

doi:10.1016/j.jallcom.2015.09.186

Cited by 29 publications

(10 citation statements)

References 48 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The peaks at 78/80 cm −1 can be attributed to E (TO/LO) symmetries of CZTSe 37,42 . Similar Raman peaks were obtained by Dimitrievska et al, 42 Juskenas et al, 38 and Khare et al 37 In addition, two weak peaks on the right shoulders of the peaks at 232 and 236 cm −1 were referred to the MoSe 2 phase. Consequently, the analysis of the Raman data suggested that the selenization of the precursor films led to the formation of CZTSe and CZTSSe with quasi‐ordered kesterite structure and the films contained both the KS and ST phases.…”

Section: Resultssupporting

confidence: 81%

“…The peak at 172 cm −1 can be referred to the mode A2 of ST (175.40 сm −1 ) composed of the vibration of Se anions 37‐39 . The obtained peaks at 232 cm −1 (sample A1) and 236 сm −1 (sample A2) correspond to the vibrations of symmetry Е (TO/LO) of KS (233.02 сm −1 ) generated by the anion and cation vibrations of Cu 2 ZnSnSe 4.…”

Section: Resultsmentioning

confidence: 95%

“…The obtained peaks at 232 cm −1 (sample A1) and 236 сm −1 (sample A2) correspond to the vibrations of symmetry Е (TO/LO) of KS (233.02 сm −1 ) generated by the anion and cation vibrations of Cu 2 ZnSnSe 4. 37‐40 A very low amount of S in the sample A2 might be caused to a small shift in the peak position from 232 to 236 cm −1 due to a change in the bonding between the atoms. It was worthy of note that a low‐intensity band at 327 cm −1 corresponding S anion was only observed in the Raman spectra of the sample A2.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

View full text Add to dashboard Cite

Summary Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 absorber films were grown on soda lime glass and Mo‐coated soda lime glass substrates by deposition of the precursor films via RF magnetron sputtering method in the stacking orders of Cu/Sn/Zn/Mo/SLG and Cu/Sn/ZnS/Mo/SLG using metallic Zn or binary sulfide ZnS targets and subsequently carrying out of selenization process. It was aimed to find out the effect of Zn or ZnS target types and the small amount of S originated from ZnS target material used in the deposition of precursor films on the structural, morphological, optical, and electrical characteristics of the films to be selenized. XRD and Raman spectroscopy analysis showed that the kesterite CZTSe structure was predominantly formed in both cases where Zn and ZnS targets were used. According to the EDX analysis, S content in the prepared film using ZnS target was only around 1.79 at%. This indicated that a considerable amount of S in the film was driven out during the selenization process. Scanning electron microscopy analysis revealed that ZnS target material contributed to the achievement of the absorber films with larger grain size. It was also determined that the thickness of the interfacial MoSe2 film between the absorber and Mo films decreased by using ZnS target in the precursor film. This was attributed to ZnS layer with a high melting point acting as a barrier layer over Mo film and retarding the diffusion of Se into the Mo film during the selenization process. In addition, the band gap energy values of the Cu2ZnSnSe4 and Cu2ZnSn(S,Se)4 films were found to be 1.18 and 1.28 eV, respectively.

show abstract

Section: Resultssupporting

confidence: 81%

Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

et al. 2020

View full text Add to dashboard Cite

show abstract

“…A similar asymmetrically broadening dominant Raman peak of the CZTSe was observed in few works (Khare et al, 2012;Djemour et al, 2013;Juskenas et al, 2016;Rey et al, 2014;Schelhas et al, 2017). For…”

Section: Raman Spectroscopysupporting

confidence: 80%

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

et al. 2020

Self Cite

View full text Add to dashboard Cite

The temperature dependence (in range from 24 to 290 K) of Raman spectroscopy of the Cu 2 ZnSnSe 4 (CZTSe) films with Zn-rich (series A) and Zn-poor (series B) composition obtained on a Ta foil is investigated. Analisys and approximation by the Lorentz function of the CZTSe Raman spectra suggests that the CZTSe most intense Raman peak consists of two modes (at 192/189 and 194/195 cm −1 ), which are slightly shifted from each other. In addition, the Raman peaks around 192 and 189 cm −1 lead to asymmetric broadening of dominant peaks at 194 and 195 cm −1 in Raman spectra of the CZTSe films series A and B, respectively. In the case of the Sn-rich CZTSe films, we attribute of Raman peak around 189 cm −1 to SnSe 2 compound. However in the case of the Snpoor CZTSe films, the observable shift is too high to assign confidently the 192 cm −1 band to a SnSe 2 compound, which was not detected by XRD analysis. We suppose that this mode is attributed to disordered kesterite structure. The temperature dependence Raman spectra for both series of the CZTSe films shows that a change temperature from 290 to 24 K leads to position shift and narrowing of the CZTSe Raman A-modes. The calculated temperature coefficients and anharmonic constants in Klemens model approximations for temperature dependence of shift position and FWHM of the CZTSe A-modes shown that four-phonon process has dominant contribution in damping process and as a consequence in Raman spectrum changes for two series of the CZTSe films.

show abstract

“…Two stage process found to be preferable and very successful for growth of Cu 2 ZnSnSe 4 films [4] due to its scalability with large throughput. In first step, metallic stacks of Cu-Zn-Sn were deposited onto glass/Mo coated glass substrate using several techniques such as co-evaporation [5], sputtering [6][7][8][9][10][11][12], vacuum evaporation [13], electro deposition [14][15][16], e-beam evaporation [17], spin coating [18] and knife edge coating [19]. Later, selenization of metallic precursors was carried out using elemental selenium/H 2 Se gas in presence of inert Ar/N 2 atmosphere at elevated temperature (≥450 °C).…”

Section: Introductionmentioning

confidence: 99%

Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

Patil

Nagapure

Mary

et al. 2017

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

composition of elements across the thickness is fairly uniform. Energy dispersive X-ray analysis measurement reveals that the obtained films are Cu-poor and Zn-rich. The scanning electron micrographs of binary selenide stacks selenized at a temperature of 350 °C shows randomly oriented cylindrical grains. The optical absorption studies indicated a direct band gap of 1.01 eV. The films showed p-type conductivity with electrical resistivity of 4.66 Ω cm, Hall mobility of 15.17 cm 2 (Vs) −1 and carrier concentration of 8.82 × 10 16 cm −3 .

show abstract

XRD studies of an electrochemically co-deposited Cu–Zn–Sn precursor and formation of a Cu2ZnSnSe4 absorber for thin-film solar cells

Cited by 29 publications

References 48 publications

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

Contact Info

Product

Resources

About

XRD studies of an electrochemically co-deposited Cu–Zn–Sn precursor and formation of a Cu2ZnSnSe4 absorber for thin-film solar cells

Cited by 29 publications

References 48 publications

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Investigation on the properties of Cu 2 ZnSnSe 4 and Cu 2 ZnSn(S,Se) 4 absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

Low temperature crystallization of Cu2ZnSnSe4 thin films using binary selenide precursors

Contact Info

Product

Resources

About

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks

Investigation on the properties of Cu ₂ ZnSnSe ₄ and Cu ₂ ZnSn(S,Se) ₄ absorber films prepared by magnetron sputtering technique using Zn and ZnS targets in precursor stacks