2016
DOI: 10.1016/j.surfcoat.2016.03.030
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XPS valence band studies of nanocrystalline Zr Pd alloy thin films

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Cited by 17 publications
(11 citation statements)
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“…A capping layer of 5 nm Pd was used to allow a fast uptake and release of hydrogen at a temperature of less than 370 K and to avoid oxidation of the MLs. As a substrate we have used Si(100) wafers with an oxidised surface to prevent a silicide formation [15][16][17].…”
Section: Methodsmentioning
confidence: 99%
“…A capping layer of 5 nm Pd was used to allow a fast uptake and release of hydrogen at a temperature of less than 370 K and to avoid oxidation of the MLs. As a substrate we have used Si(100) wafers with an oxidised surface to prevent a silicide formation [15][16][17].…”
Section: Methodsmentioning
confidence: 99%
“…As a substrate we have used Si(100) wafer with an oxidised surface to prevent a silicide formation [15][16][17]. The Fe-layer was deposited using a DC source.…”
Section: Methodsmentioning
confidence: 99%
“…The number of repetition was equal to 10. Finally, a protective layer of 10 nm Pd was deposited to allow a fast uptake and release of hydrogen at RT and to avoid oxidation of the top Ni sublayer [14,15].…”
Section: Methodsmentioning
confidence: 99%