XPS study for reactively sputtered titanium nitride thin films deposited under different substrate bias

Jiang, Ning; Zhang, H.J.; Bao, Sheng; Shen, Y.G.; Zhou, Zhongfu

doi:10.1016/j.physb.2004.07.001

Cited by 124 publications

(53 citation statements)

References 21 publications

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“…The Ti 2p spectra for TiN is given in Fig.4(a). By comparison with the binding energies available in the literature [19][20][21][22][23][24] , amorphous TiO 2 (Ti-2p3/2: 458.3 eV, Ti-2p1/2: 463.4 eV) and TiN (Ti-2p3/2: 455.7 eV, Ti-2p1/2: 461.3 eV) could be identifi ed on the surface of the product. Fig.4(b) shows the N 1s bands for the TiN products from the refluxing-derived precursor.…”

Section: Resultsmentioning

confidence: 99%

Preparation of titanium nitride nanoparticles from a novel refluxing derived precursor

Liu

Yao

et al. 2011

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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Titanium nitride (TiN) nanoparticles were prepared from a novel refl uxing-derived precursor. The organic/inorganic hybrid precursor was prepared by a two-stage refl uxing method using hydrous TiO 2 as titania source and n-dodecane as carbon source. The precursor was heat-treated to 1 200 °C in fl owing ammonia (NH 3 ) to get TiN nanoparticles. The phase and chemical compositions were investigated by means of XRD, Raman spectroscopy and XPS. Samples microstructure was studied by means of SEM, TEM and SEAD. XRD pattern indicated that the product was face-centered cubic TiN with a lattice constant a = 4.236 Å and average crystallite sizes of 35.2 nm. Raman spectra indicated that long time refl uxing results in Alkane dehydrogenation and the formation of coke on TiO 2 nanoparticles. Oxygen presence in TiN lattice was confirmed by XPS investigation. The particle size that was showed by Electron microscopy photographs ranged from 20 to 60 nm.

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Section: Resultsmentioning

confidence: 99%

Preparation of titanium nitride nanoparticles from a novel refluxing derived precursor

Liu

Yao

et al. 2011

J. Wuhan Univ. Technol.-Mat. Sci. Edit.

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“…Generally, the peak position of Ti 2p 3/2 binding energies of Ti 4+ and Ti 3+ ions are 458.5-458.9 eV and 456.9-458.2 eV, respectively [17]. According to Endle et al [18] and Jiang et al [19], the binding energy of Ti 4+ shifts to lower energy when the reduction from Ti 4+ to Ti 3+ ions occurs. The binding energy of the initial rutile powder was 458.5 eV, indicating that the rutile powders were not reduced.…”

Section: Resultsmentioning

confidence: 99%

Dielectric properties of nanocrystalline TiO2 prepared using spark plasma sintering

et al. 2006

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Ultra fine rutile powders (below 50 nm) were prepared via the sol-gel process and bulk type TiO 2 specimens were fabricated using spark plasma sintering (SPS). The TiO 2 specimen sintered at a low temperature (720 • C) exhibited a highly relative density (97%) and a nano-sized grain structure (200 nm). Dielectric properties of spark plasma sintered TiO 2 specimens including dielectric constants (k) and losses (tan δ) were measured. The TiO 2 specimen, obtained by SPS, showed a high dielectric constant (∼780) and a low tan δ (∼0.005), and a relaxation behavior at 1 MHz. After the subsequent annealing process of the TiO 2 specimen in O 2 flow, the dielectric constants remarkably decreased (k = 100s). These dielectric properties of nanocrystalline TiO 2 specimens prepared by SPS were discussed in terms of space charges produced by the reduction of Ti 4+ ions and crystallographic orientations of grains.

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“…The power density at the two 2 inch diameter Ti targets was set to 6.2 W cm -2 during deposition and an asymmetrically pulsed bias potential of -100 V was applied to the substrates to provide additional energy for the film forming species [21]. This resulted in a deposition rate of 11 nm min -1 for TiN.…”

Section: Methodsmentioning

confidence: 99%

Copper diffusion into single-crystalline TiN studied by transmission electron microscopy and atom probe tomography

Mühlbacher¹,

Martín²,

Sartory³

et al. 2015

Thin Solid Films

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XPS study for reactively sputtered titanium nitride thin films deposited under different substrate bias

Cited by 124 publications

References 21 publications

Preparation of titanium nitride nanoparticles from a novel refluxing derived precursor

Preparation of titanium nitride nanoparticles from a novel refluxing derived precursor

Dielectric properties of nanocrystalline TiO2 prepared using spark plasma sintering

Copper diffusion into single-crystalline TiN studied by transmission electron microscopy and atom probe tomography

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