XPS studies at various temperatures of nitrogen implanted copper

Prabhawalker, P.D.; Kothari, D.C.; Nair, M.R.; Raole, P.M

doi:10.1016/0168-583x(85)90546-4

Cited by 17 publications

(5 citation statements)

References 5 publications

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“…However, it can form metastable compounds with copper by ion implantation [18]. As mentioned in the literature [20], the enthalpy of the formation of Cu 3 N is +47.5 kJ/mol.…”

Section: Resultsmentioning

confidence: 99%

“…Ion implantation is known as a powerful technique for inducing the development of new phases in thin metal films or in the nearsurface region of bulk materials [16][17][18]. Direct nitrogen implantation into metals can lead to the formation of metal nitrides at room temperature, while employing conventional techniques such as nitriding for the synthesis of most metal nitrides requires hightemperature processing [16].…”

mentioning

confidence: 99%

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Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Kazemeini-Asl¹,

Larijani

Fathollahi³

2014

Micro & Nano Letters

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Cu thin films sputter-coated on single crystals of silicon were implanted with 30 keV nitrogen ions under various doses from 1.9 × 10 17 to 5.7 × 10 17 ions/cm 2. The prepared samples were subsequently annealed in nitrogen atmosphere. The grazing incidence X-ray diffraction analysis revealed that in addition to the crystalline copper nitride phase, copper azides were developed by nitrogen ion implantation. With an increase of the implantation dose to 2.3 × 10 18 ions/cm 2 , much of the Cu film was transformed to the crystalline Cu 3 N phase. Furthermore, the effect of nitrogen ion implantation on Cu thin films under various doses was investigated. The structural properties, morphology and sheet resistance of samples were investigated by grazing incidence X-ray diffraction, atomic force microscopy, field emission scanning electron microscopy and four-point probe techniques, respectively. In addition, the dependence of resistivity of the implanted samples on the implantation dose as well as structural properties is discussed.

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“…However, it can form metastable compounds with copper by ion implantation [18]. As mentioned in the literature [20], the enthalpy of the formation of Cu 3 N is +47.5 kJ/mol.…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Influence of ion dose on nanostructure morphology and electrical properties of nitrogen implanted‐annealed copper

Kazemeini-Asl¹,

Larijani

Fathollahi³

2014

Micro & Nano Letters

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“…Within this context, the formation of metastable nitrides by nitrogen implantation with several phases of N-Cu present at the same time has been reported [21]. This work involves nitrogen implantation at high doses and annealing at various temperatures.…”

Section: Introductionmentioning

confidence: 99%

Diffusion of implanted nitrogen in the Cu(0 0 1) surface

Cristina

Gómez

Vidal

et al. 2010

J. Phys. D: Appl. Phys.

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Auger electron spectroscopy (AES) was used to study the thermally activated diffusion process of low energy N+ implanted on the Cu(0 0 1) surface, a proposed model system for self-assembled nanostructures. The nitrogen diffusion was characterized as a function of the substrate temperature and the N+ implantation energy. An experiment that combines a temperature evolution followed by an AES depth profiling was done to clarify the type of diffusion. A comparison of the experimental results with kinetic Monte Carlo simulations suggests a preferential diffusion of the nitrogen to the surface followed by nitride decomposition.

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“…Then, to preserve bulk electrical properties, only the surface has to be hardened. It has been shown that ion implantation of copper and copper alloys can be successfully applied using nitrogen, carbon or boron [2] and nitrogen implantation seems the most promising [3][4][5][6][7][8]. The equilibrium solubility of nitrogen in copper is extremely low and there is no Cu-N phase diagram reported in the literature [9].…”

mentioning

confidence: 99%

“…Three nitrides are reported for the Cu-N system (Cu 3 N, CuN 3 and CuN 6 [9]) and it has been shown since a long time that Cu 3 N could be easily obtained by chemical reactions between NH 3 and CuF 2 [11] or CuO [12]. Similar Cu 3 N nitrides could also be obtained by ion implantation [4,[6][7][8] but this technique also leads sometimes to a different stoichiometry [3].…”

mentioning

confidence: 99%