XPS for chemical- and charge-sensitive analyses

Sezen, Hikmet; Süzer, Şefik

doi:10.1016/j.tsf.2013.02.002

Cited by 46 publications

(29 citation statements)

References 57 publications

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“…In particular, long lived electron‐hole couples of the (c) type would alter persistently the charge balance on the two sides of the interface, thus screening the built‐in electric field and flattening the band bending. This is reminiscent of the surface photovoltage that is known to flatten under light the band bending at semiconducting surfaces and interfaces …”

Section: Discussion Of the Mechanisms Determining The Persistent Photmentioning

confidence: 99%

Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfaces

Gennaro

Uccio

Aruta

et al. 2013

Advanced Optical Materials

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The transport characterization in the dark and under light irradiation of three different interfaces-LaAlO3/SrTiO3, LaGaO3/SrTiO3, and the novel NdGaO3/ SrTiO3 heterostructure is reported. All of them share a perovskite structure, an insulating nature of the single building blocks, a polar/non-polar character, and a critical thickness of four unit cells for the onset of conductivity. The interface structure and charge confinement in NdGaO3/SrTiO3 are probed by atomic-scale-resolved electron energy loss spectroscopy showing that, similarly to LaAlO3/SrTiO3, extra electronic charge confined in a sheet of about 1.5 nm in thickness is present at the NdGaO3/SrTiO3 interface. Electric transport measurements performed in the dark and under radiation show remarkable similarities and provide evidence that the persistent perturbation induced by light is an intrinsic peculiar property of the three investigated oxide-based polar/non-polar interfaces. This sets a framework for understanding the previous contrasting results found in the literature about photoconductivity in LaAlO3/SrTiO3 and highlights the connection between the origin of persistent photoconductivity and the origin of conductivity itself. An improved understanding of the photoinduced metastable electron-hole pairs might allow light to be shed directly on the complex physics of this system and on the recently proposed perspectives of oxide interfaces for solar energy conversion

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Section: Discussion Of the Mechanisms Determining The Persistent Photmentioning

confidence: 99%

Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfaces

Gennaro

Uccio

Aruta

et al. 2013

Advanced Optical Materials

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“…Because of the limited information depth of PES measurements, a quantitative value for the Sb 2 Se 3 bulk Fermi level cannot be extracted. For band bending in the ZnS layer, X‐ray induced junction photovoltage has to be taken into account . To investigate the presence of X‐ray induced junction photovoltage, the Zn 2p 3/2 CL BE was compared for ZnS films grown on indium tin oxide (ITO) coated glass substrates as well as on Sb 2 Se 3 (see Figure S5a, Supporting Information).…”

mentioning

confidence: 99%

Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb₂Se₃/ZnS Heterointerfaces

Siol

Schulz

Young

et al. 2016

Adv Materials Inter

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Combinatorial techniques can be utilized to accelerate in situ interface studies. This is demonstrated by investigating the prototypical Sb2Se3/ZnS heterojunction. Film thickness gradients on the substrate are used to minimize the required number of depositions and transfers. Other synthesis parameters such as the substrate temperature or film composition can be systematically covaried with thickness to cover several individual interface experiments on one substrate.

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“…Additionally, certain patterns were sketched on the silicon oxide surface using the PTFE tip to investigate and control the hydrophobicity of the surface. X-ray photoelectron spectroscopy (XPS), a surface sensitive analysis technique with high chemical selectivity, [26][27][28] was utilized as the main tool for the verification and further analysis of the PTFE transfer. The fact that PTFE is a halogenated polymer provides an analytically simpler identification of the transfer characteristics by evaluating F1s and C1s peaks in a more detailed manner.…”

Section: Introductionmentioning

confidence: 99%

Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

Uçar

Çopuroğlu

Baykara

et al. 2014

The Journal of Chemical Physics

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We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (∼0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO2 surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

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XPS for chemical- and charge-sensitive analyses

Cited by 46 publications

References 57 publications

Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfaces

Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfaces

Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb₂Se₃/ZnS Heterointerfaces

Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

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XPS for chemical- and charge-sensitive analyses

Cited by 46 publications

References 57 publications

Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfaces

Persistent Photoconductivity in 2D Electron Gases at Different Oxide Interfaces

Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb2Se3/ZnS Heterointerfaces

Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

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Combinatorial In Situ Photoelectron Spectroscopy Investigation of Sb₂Se₃/ZnS Heterointerfaces