XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films

Islam, Md. Nurul; Ghosh, Tapas; Chopra, K. L.; Acharya, H. N.

doi:10.1016/0040-6090(95)08239-5

Cited by 538 publications

(246 citation statements)

References 18 publications

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“…its intensity may be related to the variation of the concentration of oxygen vacancies. The peak at the highest BE position is usually attributed to chemisorbed oxygen species (that appears also in ZnO-based thin films without Er or Yb) [27,28] and/or to the formation of Er or Yb oxide [29,30]. Although the film surface was previously sputtered for three minutes, it does not strictly mean that the contamination component was completely removed [27,31].…”

Section: Resultsmentioning

confidence: 99%

Up-conversion effect of Er- and Yb-doped ZnO thin films

et al. 2014

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Visible up-conversion in ZnO:Er and ZnO:Er:Yb thin films deposited by RF magnetron sputtering under different O 2 -rich atmospheres has been studied. Conventional photoluminescence (325 nm laser source) and up-conversion (980 nm laser source) have been performed in the films before and after an annealing process at 800°C. The resulting spectra demonstrate that the thermal treatment, either during or postdeposition, activates optically the Er 3+ ions, being the latter process much more efficient. Moreover, the atmosphere during deposition was also found to be an important parameter, as the deposition under O 2 flow increases the optical activity of Er +3 ions. In addition, the inclusion of Yb 3+ ions into the films has shown an enhancement of the visible up-conversion emission at 660 nm by a factor of 4, which could be associated to either a better energy transfer from the 2 F 5/2 Yb level to the 4 I 11/2Er one, or to the prevention of having Er 2 O 3 clustering in the films.2

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Section: Resultsmentioning

confidence: 99%

Up-conversion effect of Er- and Yb-doped ZnO thin films

et al. 2014

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“…The medium binding energy of O 1s-2, whose intensity partly represents the variation in the concentration of oxygen vacancies, is related to the O 2− ions in the oxygen-deficient regions within the matrix of ZnO. 20,22 The high binding energy peak of O 1s-3 may be ascribed to a specific chemisorbed oxygen such as the adsorbed H 2 O or OH − type species on the surface of the film.…”

Section: Resultsmentioning

confidence: 99%

Doping Effect of Electron Transport Layer on Nanoscale Phase Separation and Charge Transport in Bulk Heterojunction Solar Cells

et al. 2013

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ABSTRACT:We investigated the influence of the Ga doping in the ZnO interlayer as an electron transport layer (ZnO ETL) on the nanoscale phase separation in the bulk heterjunction (BHJ) layer coated on the ETL as well as the morphological and electrical properties of a low temperature sol−gel-derived pristine ZnO ETL (P-ETL) and Ga-doped ZnO ETL (G-ETL), which affect the performance of inverted organic solar cells (IOSCs). X-ray photoelectron spectroscopy (XPS) confirms the successful incorporation of the element Ga in the ZnO ETL. The short circuit current densities (J SC ) of IOSCs fabricated using a G-ETL were significantly improved from those of IOSCs fabricated with a P-ETL. The maximum J SC was obtained at 2 at. % Ga doping. The IOSCs fabricated with a 2 at. % G-ETL demonstrated power conversion efficiencies of 3.51% (P3HT:PC 60 BM) and 5.43% (PCDTBT:PC 70 BM), which were higher than the power conversion efficiencies of 2.88% (P3HT:PC 60 BM) and 4.90% (PCDTBT:PC 70 BM) of the IOSCs fabricated with a P-ETL under simulated air mass 1.5 global full-sun illumination. The better performance was attributed to the improved electrical properties of the G-ETL and the enhanced nanoscale phase separation in the BHJ active layer.

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“…2 shows the XPS spectrum obtained from a ZnO film processed at a plasma power of 100 W, plasma pressure of 57.5 mTorr and plasma exposure time of 2 s. The O1s and the Zn2p 3/2 peaks are observed at about 531 eV and 1022 eV, respectively. The stoichiometry is determined from the O1s and Zn2p 3/2 photoelectron peaks as shown in this work [22]. The C1s peak which is the carbon impurity appeared at 285 eV for all samples deposited.…”

Section: Resultsmentioning

confidence: 99%

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

Sultan

Clark

Masaud

et al. 2012

Microelectronic Engineering

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a b s t r a c tThis paper describes a systematic approach to analyze the simultaneous impact of various reactant plasma parameters of remote plasma enhanced ALD (PEALD) on the ZnO thin film properties. Particular emphasis is placed on the film stoichiometry which affects the electrical properties of the thin film. Design of Experiment (DOE) is used to study the impact of the oxygen plasma parameters such as the RF power, pressure and plasma time to realize semiconductor quality of ZnO thin film. Based on the optimized plasma condition, staggered bottom-gate TFTs were fabricated and its electrical characteristics were measured.

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XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films

Cited by 538 publications

References 18 publications

Up-conversion effect of Er- and Yb-doped ZnO thin films

Up-conversion effect of Er- and Yb-doped ZnO thin films

Doping Effect of Electron Transport Layer on Nanoscale Phase Separation and Charge Transport in Bulk Heterojunction Solar Cells

Remote plasma enhanced atomic layer deposition of ZnO for thin film electronic applications

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