XPS and TEM studies of oxidation states on Sn solder ball

Yiqiang, Shen; Chen, Yixin; Sheng, Lee Hwang; Yin, Chow Shue; Xiang, Xing Zhen; Younan, Hua; Li, Xiaomin

doi:10.1109/ipfa.2014.6898151

Cited by 1 publication

(1 citation statement)

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“…The spectra were analyzed using the CasaXPS 2.3.22 software (Teignmouth, UK). The XPS data analysis of the high resolution spectra was performed using Shirley background, and the constraints on energy locations of the different oxidation states and the split-orbit doublet ratios were detailed in [ 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 ]. A mixture of Gaussian–Lorentzian line shape GL (30) was used for the oxides fitting while for the metallic core lines a slightly asymmetric shape line in the form of LA (α,β,m) was used.…”

Section: Methodsmentioning

confidence: 99%

The Initial Oxidation of HfNiSn Half-Heusler Alloy by Oxygen and Water Vapor

Appel

Cohen²,

Beeri³

et al. 2021

Materials

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The MNiSn (M = Ti, Zr, Hf) n-type semiconductor half-Heusler alloys are leading candidates for the use as highly efficient waste heat recovery devices at elevated temperatures. For practical applications, it is crucial to consider also the environmental stability of the alloys at working conditions, and therefore it is required to characterize and understand their oxidation behavior. This work is focused on studying the surface composition and the initial oxidation of HfNiSn alloy by oxygen and water vapor at room temperature and at 1000 K by utilizing X-ray photoelectron spectroscopy. During heating in vacuum, Sn segregated to the surface, creating a sub-nanometer overlayer. Exposing the surface to both oxygen and water vapor resulted mainly in Hf oxidation to HfO2 and only minor oxidation of Sn, in accordance with the oxide formation enthalpy of the components. The alloy was more susceptible to oxidation by water vapor compared to oxygen. Long exposure of HfNiSn and ZrNiSn samples to moderate water vapor pressure and temperature, during system bakeout, resulted also in a formation of a thin SnO2 overlayer. Some comparison to the oxidation of TiNiSn and ZrNiSn, previously reported, is given.

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