XPS and STM Studies on Initial Oxidation of Si(110)-16x2

Suemitsu, Maki; Togashi, Hajime; Takahashi, Yuya; Konno, Atsushi; Yamamoto, Yoshihiko; Teraoka, Yuden; Yoshigoe, Akitaka; Asaoka, Hidehito

doi:10.1557/proc-0996-h01-04

Cited by 2 publications

(2 citation statements)

References 9 publications

(9 reference statements)

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“…These sites are somehow related to the 16 Â 2 reconstruction of Si(110) clean surface, which is consistent with our recent Si 2p XPS measurement. 23)…”

Section: Discussionmentioning

confidence: 99%

Observation of Initial Oxidation on Si(110)-16×2 surface by Scanning Tunneling Microscopy

Togashi

Takahashi

Konno

et al. 2007

jjap

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The initial oxidation of a Si(110)-16×2 clean surface, both at room temperature (RT) and elevated temperatures (635, 660 °C), was investigated by scanning tunneling microscopy (STM). The effects of annealing (300 °C, 15 min) on an RT-oxidized surface were also investigated. On the RT-oxidized surface, a BN site, detected as a bright (B) spot in the filled-state image but as a normal (N) 16×2 adatom in the empty-state image, was observed. After annealing, DD, BD, and BB sites were found to exist in addition to the BN site. Here, DD (BD, BB) is a site that appears dark (bright, bright) in its filled-state image and appears dark (dark, bright) in its empty-state image. The relative population is DD>BD≈BN>BB. For oxidation at 635 °C, DD, BD, and BN sites were observed. For oxidation at 660 °C, only the BD site was observed. On the basis of these results, an atomistic process during the initial oxidation of the Si(110)-16×2 surface is discussed.

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“…These sites are somehow related to the 16 Â 2 reconstruction of Si(110) clean surface, which is consistent with our recent Si 2p XPS measurement. 23)…”

Section: Discussionmentioning

confidence: 99%

Observation of Initial Oxidation on Si(110)-16×2 surface by Scanning Tunneling Microscopy

Togashi

Takahashi

Konno

et al. 2007

jjap

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“…The rapid initial oxidation was found experimentally by observing O1s photoemission spectra with synchrotron radiation [15,16]. The oxidation of adatoms in PPs was suggested experimentally by observing Si2p and O1s photoemission spectra with synchrotron radiation in conjunction with STM observation [17]. The variation of oxygen adsorption structures by thermal annealing from a room temperature was observed by SR-XPS and STM.…”

Section: Stable Structure Of Three O Atomsmentioning

confidence: 92%

First‐principles study on initial stage of oxidation on Si(110) surface

Nagasawa

Shiba

Sueoka

2011

Phys. Status Solidi (c)

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The architect of several artists' homes, Jamie Fobert is now landing himself a string of acclaimed arts and commercial commissions. From his warehouse in Old Street in London, he explained to Howard Watson how the sensitive integrity of his architecture has developed out of ‘an inside‐out approach’, which puts particular store in ‘framing light and views’ and the sculpting of space aided by physical model‐making, rather than the synthetic top‐down views that are imposed by widely used CAD programs. Copyright © 2008 John Wiley & Sons, Ltd.

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XPS and STM Studies on Initial Oxidation of Si(110)-16x2

Cited by 2 publications

References 9 publications

Observation of Initial Oxidation on Si(110)-16×2 surface by Scanning Tunneling Microscopy

Observation of Initial Oxidation on Si(110)-16×2 surface by Scanning Tunneling Microscopy

First‐principles study on initial stage of oxidation on Si(110) surface

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