1999
DOI: 10.1016/s0169-4332(98)00378-x
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XPS and SIMS analysis of gold silicide grown on a bromine passivated Si(111) substrate

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Cited by 35 publications
(31 citation statements)
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“…The shoulder of the Au 4f doublet does not shift as a function of sputtering time, placed at 1.1 eV towards higher BE and the spin orbit splitting of 3.7 eV. The binding energy shift is consistent with previous reports on the Au/Si interface, in which it ranges from 0.6 to 1.2 eV[26][27][28]51 .…”
supporting
confidence: 90%
“…The shoulder of the Au 4f doublet does not shift as a function of sputtering time, placed at 1.1 eV towards higher BE and the spin orbit splitting of 3.7 eV. The binding energy shift is consistent with previous reports on the Au/Si interface, in which it ranges from 0.6 to 1.2 eV[26][27][28]51 .…”
supporting
confidence: 90%
“…Deconvolution of these lines showed the presence of two peaks in each line. For instance, the peaks of Au 4 f 7/2 line appear at 85.33 eV, which is a characteristic of metallic gold, and at 83.9 eV, 1.43 eV higher in BE can be ascribed to silicide [ 21 - 23 ]. Moreover, the 83.9 eV peak is due to the interaction of gold with silicon at the interface [ 24 ] by laser irradiation, resulting the formation of gold silicide in the nanoparticles aggregate.…”
Section: Resultsmentioning
confidence: 99%
“…This has for example motivated the great number of investigations of metal/Si interfaces reported during the last two decades [1]. When for example a few monolayers of gold are deposited on silicon substrates formation of crystalline Au-silicides at the Au/Si interface has been reported [1][2][3][4]. Several stable surface reconstructions have been observed to form depending on the amount of Au deposited and the annealing temperature applied.…”
Section: Introductionmentioning
confidence: 99%