XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films

Brundle, C. R.; Conti, G.; Mack, P.

doi:10.1016/j.elspec.2010.03.008

Cited by 61 publications

(41 citation statements)

References 21 publications

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“…A thorough review of the use of XPS for characterization and metrology of thin films will be published elsewhere. [10] …”

Section: Xps As a Metrology Methods For Gate Oxide: Thickness; N Dose mentioning

confidence: 97%

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Some surface and interface characterization and metrology requirements in the wafer processing industry

Brundle¹

2010

Surface & Interface Analysis

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With the rapid decrease in thickness of deposited layers during silicon wafer processing, there has been a parallel increase in the use of surface/interface materials analysis techniques. There is now little distinction between surface/interface and thin film analysis when films are only a few nm thick. This brief review presents some of the general concepts and needs for both materials characterization and metrology; some of the current requirements these needs impose on analytical methods; and briefly reviews the status of a few of the techniques better known to the surface/interface analysis community, particularly XPS.

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“…A thorough review of the use of XPS for characterization and metrology of thin films will be published elsewhere. [10] …”

Section: Xps As a Metrology Methods For Gate Oxide: Thickness; N Dose mentioning

confidence: 97%

“…There are numerous approximations in this relationship, [6] but for SiO 2 , where the ratio involved is Si 4+ /Si 0 , it has been demonstrated that linearity holds for thickness of up to at least 4 nm [6,10,11] provided angles beyond a θ of 65…”

Section: Overlayer Thicknessmentioning

confidence: 99%

Some surface and interface characterization and metrology requirements in the wafer processing industry

Brundle¹

2010

Surface & Interface Analysis

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“…The approach from [25,26] was used to calculate relative depth distribution of atoms. Logarithm of peak intensity ratio is measured at high (50) and low (15) electron emission angles.…”

Section: Resultsmentioning

confidence: 99%

XPS study of 5-chloro-1,2,3-benzotriazole adsorption on nickel surface

Arkhipushkin¹,

Yesina

Andreev³

et al. 2012

Int. J. Corros. Scale Inhib.

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Surface layers formed by adsorption of 5-chloro-1,2,3-benzotriazole (5-chloroBTA) on nickel and influence of pH of borate buffer solution and electrode potential on formation multicomponent oxidized films on nickel were studied by XPS. It was found that at concentration of 10 -4 mol/l in neutral borate solutions a 0.7 nm monomolecular layer of 5-chloroBTA is formed. Using peak intensity angular dependence of XPS spectra the orientation of 5-chloroBTA close to vertical on nickel hydroxide formed on the nickel surface was shown. 5-ChloroBTA forms a chemical bond by lone pair of nitrogen and surface nickel cations.

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“…It is important, however, to point out that the process of the XPS depth profiling (alternate cycles of spectral acquisition and Ar sputtering) may have introduced artifacts of change in chemistry. 25 Furthermore, coating conditions such as dosing and purging times may have yet been optimized, as we merely chose the current conditions for demonstration of the multicusp-type μrPEALD system.…”

Section: B Properties Of the Al 2 O 3 Thin Filmsmentioning

confidence: 99%

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

Dechana

Thamboon

Boonyawan

2014

Review of Scientific Instruments

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A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

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XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films

Cited by 61 publications

References 21 publications

Some surface and interface characterization and metrology requirements in the wafer processing industry

Some surface and interface characterization and metrology requirements in the wafer processing industry

XPS study of 5-chloro-1,2,3-benzotriazole adsorption on nickel surface

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

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