2019
DOI: 10.1103/physrevmaterials.3.054408
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XMCD study of magnetism and valence state in iron-substituted strontium titanate

Abstract: Room temperature ferromagnetism was characterized for thin films of SrTi0.6Fe0.4O3-δ grown by pulsed laser deposition on SrTiO3 and Si substrates under different oxygen pressures and after annealing under oxygen and vacuum conditions. X-ray magnetic circular dichroism demonstrated that the magnetization originated from Fe 2+ cations, whereas Fe 3+ and Ti 4+ did not contribute. Films with the highest magnetic moment (0.8 μB per Fe) had the highest measured Fe 2+ :Fe 3+ ratio of 0.1 corresponding to the largest … Show more

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Cited by 7 publications
(7 citation statements)
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“…Since the discovery of room temperature ferromagnetism in Co-doped TiO 2 thin films [ 63 ] understanding the causes of ferromagnetism in TiO 2 materials is a subject of lively discussion [ 64 , 65 , 66 , 67 , 68 , 69 ]. The hysteresis loop diagram for S1 resembles the results obtained in paper [ 70 ] for TiO 2 single crystals annealed in a high vacuum where the investigated samples were diamagnetic at room temperature with a characteristic low-field ferromagnetic behavior.…”
Section: Resultsmentioning
confidence: 99%
“…Since the discovery of room temperature ferromagnetism in Co-doped TiO 2 thin films [ 63 ] understanding the causes of ferromagnetism in TiO 2 materials is a subject of lively discussion [ 64 , 65 , 66 , 67 , 68 , 69 ]. The hysteresis loop diagram for S1 resembles the results obtained in paper [ 70 ] for TiO 2 single crystals annealed in a high vacuum where the investigated samples were diamagnetic at room temperature with a characteristic low-field ferromagnetic behavior.…”
Section: Resultsmentioning
confidence: 99%
“…So far, oxygen vacancies as donors were neglected, even though it is known that their concentration can be substantial in acceptor doped SrTiO 3 . [ 97,98 ] However, SrTiO 3 bulk defect chemistry models [ 1 ] suggest that for electronically intrinsic thin films (i.e., low [h • ]), the oxygen vacancy concentration false[VOfalse]\[[{\rm{V}}_{\rm{O}}^{ \bullet \bullet }]\] is also very low due to the mass action law Kδbadbreak=false[hfalse]2false[VOfalse]1pnormalO20.5\[{K_\delta } = {[{{\rm{h}}^ \bullet }]^2}{[{\rm{V}}_{\rm{O}}^{ \bullet \bullet }]^{ - 1}}p_{{{\rm{O}}_2}}^{ - 0.5}\] of the oxygen incorporation reaction 1normal/2O2badbreak+VOOOxgoodbreak+2h\[1{\rm{/}}2{{\rm{O}}_2} + {\rm{V}}_{\rm{O}}^{ \bullet \bullet } \mathbin{\lower.3ex\hbox{$\buildrel\textstyle\leftharpoonup\over{\smash{\rightharpoondown}}$}} {\rm{O}}_{\rm{O}}^{\rm{x}} + 2{{\rm{h}}^ \bullet }\] …”
Section: Discussionmentioning
confidence: 99%
“…So far, oxygen vacancies as donors were neglected, even though it is known that their concentration can be substantial in acceptor doped SrTiO 3 . [97,98] However, SrTiO 3 bulk defect chemistry models [1] suggest that for electronically intrinsic thin films (i.e., low [h • ]), the oxygen vacancy concentration…”
Section: Specific States Relevant In the Srtio 3 Filmsmentioning
confidence: 99%
“…It is generally accepted that low concentrations of Fe dopants in STO substitute for Ti 4+ and can exist in 4+, 3+, or 2+ oxidation states depending on 𝑃 𝑂 2 and temperature. [6][7][8] When treated or prepared in oxidizing conditions, Fe 3+ and Fe 4+ are expected to be preferred if substituted for Ti 4+ . The valence state of Fe is known to play a role in both the properties mentioned above.…”
Section: Introductionmentioning
confidence: 99%
“…Lightly Fe‐doped STO is commonly used as a model representative for acceptor‐doped large band gap electroceramics. It is generally accepted that low concentrations of Fe dopants in STO substitute for Ti 4+ and can exist in 4+, 3+, or 2+ oxidation states depending on PO2${P_{{O_2}}}$ and temperature 6–8 . When treated or prepared in oxidizing conditions, Fe 3+ and Fe 4+ are expected to be preferred if substituted for Ti 4+ .…”
Section: Introductionmentioning
confidence: 99%