Xenon Ion Implantation Induced Surface Compressive Stress for Preventing Dendrite Penetration in Solid‐State Electrolytes

Abstract

Solid‐state electrolytes (SSEs) have been thrust into the limelight for the revival of energy‐dense lithium metal batteries, but still face the challenge of failure caused by the dendrite penetration. Mounting evidence indicates that dendrite penetration is related to the mechanical failure in SSEs, which calls for mechanical engineering to tackle this problem. This work reports a proof of concept that ion implantation induced surface compressive stress enables resistance in the dendrite penetration. A deterministic sequential multiple ion energies implantation is used to generate compressive stress, with implanted Xe ions distributed in a range of 160–600 Å from the surface. The symmetric lithium cells show that pellets with an implantation dose of 1013 Xe cm−2 exhibit stable stripping/plating cycles and extended lifespan, while a lower dose of 1012 Xe cm−2 cannot create sufficient stress to prevent dendrite penetration, and an excessive dose of 1014 Xe cm−2 leads to structural destruction and a decrease in stress. This improved performance is attributed to the induced surface compressive stress balanced over crystal grains, which is confirmed by grazing incidence diffraction techniques. The author's efforts demonstrate the usefulness of surface compressive stress to suppress dendrite penetration, offering more insight into rational stress–strain engineering as opposed to empirical optimization.

Tradeoff between the Ion Exchange-Induced Residual Stress and Ion Transport in Solid Electrolytes

“…Other approaches to induce residual compressive stresses have been explored in the literature, for example shot peening, , ion-implantation, , etc. Recently, Yao et al used ion implantation to induce residual compressive stress on LLZTO pellets . They implanted Xe up to a depth range of 16–60 nm from the surface, which induces GPa level compressive stresses.…”

“…Recently, Yao et al used ion implantation to induce residual compressive stress on LLZTO pellets. 98 They implanted Xe up to a depth range of 16−60 nm from the surface, which induces GPa level compressive stresses. Because critical flaw sizes in polycrystalline solid-state electrolytes are generally on the order of micrometer or larger, realistic ion-implantation depths will fall short of the thicknesses proposed in our analysis.…”

Enhanced high temperature properties of ZTA prestressed ceramics reinforced by cordierite coating

“…9,10 Up to now, prestress techniques was applied on architectural ceramics, 11 structure ceramics 12,13 and functional ceramics. 14,15 According to our previous work, such prestressed ceramics can also exhibit perfect mechanical properties not only at room temperature, but also under high temperature. 12 Hence, in this work, a prestressed strengthening method was explored to improve the strength of ZTA ceramics at different testing temperature.…”

Radiation effects on materials for electrochemical energy storage systems

“…Electrolyte materials for solid-state batteries. Ion implantation was utilized in a solid-state electrolyte (SSE) of Li 6.4 La 3 Zr 1.4 -Ta 0.6 O 12 (LLZTO) to create compressive stress for use in SSE batteries by Yao et al 56 Samples of LLZTO were irradiated using a combination of 190, 150, 80, and 50 keV Xe ions to create a flat damage profile and uniform distribution of Xe as a function of depth into the specimen. Samples were denoted depending on the total fluence as LLZTO-L (1 Â 10 12 ions per cm 2 ), LLZTO-M (1 Â 10 13 ions per cm 2 ), and LLZTO-H (1 Â 10 14 ions per cm 2 ).…”