Xe distribution in amorphous SiO 2 as a function of implantation and thermal annealing parameters

Naas, Abdelkrim; Ntsoenzok, E.; Meneses, D. De Sousa; Hakim, B.; Beya-Wakata, A.

doi:10.1016/j.nimb.2014.08.011

Cited by 7 publications

(4 citation statements)

References 13 publications

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“…The largest bubbles are systematically located very close to the surface whereas small and mediumsized bubbles are deeper. This shift in xenon bubble position was already observed by Naas et al [54] in the case of amorphous SiO irradiated with 300 keV xenon ions at a fluence of 1.10 16 at.cm -2 . These authors reported a shift of the xenon peak toward the vacancy peak position (R p (V)) during implantation, which may approximately correspond to our dpa maximum here (see Fig.…”

Section: Iv-discussionsupporting

confidence: 80%

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Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

Baillet

Gavarini

Millard-Pinard

et al. 2018

Journal of Nuclear Materials

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Nano-grained β-silicon carbide (β-SiC) pellets were prepared by Spark Plasma Sintering (SPS). These were implanted at room temperature with 800 keV xenon at ion fluences of 5.10 15 and 1.10 17 cm-2. Microstructural modifications were studied by electronic microscopy (TEM and SEM) and xenon profiles were determined by Rutherford Backscattering Spectroscopy (RBS). A complete amorphization of the implanted area associated with a significant oxidation is observed for the highest fluence. Large xenon bubbles formed in the oxide phase are responsible of surface swelling. No significant gas release has been measured up to 10 17 at.cm-2. A model is proposed to explain the different steps of the oxidation process and xenon bubbles formation as a function of ion fluence.

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Section: Iv-discussionsupporting

confidence: 80%

“…The final step of this protocol consisted in polishing on colloidal silica. The samples were then heated at 1000°C for 10h under secondary vacuum (P < 5.10 −6 mbar), in order to relax most of the strain induced by polishing the surface [54].…”

Section: Ii-experimentalmentioning

confidence: 99%

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

Baillet

Gavarini

Millard-Pinard

et al. 2018

Journal of Nuclear Materials

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“…It should be noted that the accumulation of implanted noble gas ions leading to their clustering in the subsurface layers of irradiated materials was observed experimentally . The appearance of He and Ar clusters in silicon and silicon dioxide was confirmed for higher ion energies (>~1 keV) in contrast to the implantation of low‐energy ions, which can be thermally desorbed from the uppermost layers of the material because of the small implantation depth.…”

Section: Molecular Dynamic Simulationsmentioning

confidence: 82%

Pore sealing mechanism in OSG low‐k films under ion bombardment

Воронина

Sycheva

Lopaev

et al. 2019

Plasma Processes & Polymers

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Organosilicate glass (OSG) nanoporous films with a low dielectric constant (low-k) are used as interlayer-dielectric insulators for advanced interconnects of ultra-large-scale integration devices. Plasma treatment of these materials can lead to their degradation resulting in increasing k-value and reducing lifetime and reliability. However, for some OSG films, the densification of the uppermost surface layer and pore sealing was observed under ion irradiation. This paper presents the results of a combined experimental and modeling study of mechanisms of low-k film densification by ion bombardment depending on the film-pore size, ion type, and energy.The obtained results reveal that experimentally observed densification and pore sealing of uppermost layers of OSG films occur via collapse of near-surface pores under the impact of energetic ions. K E Y W O R D Slow-k dielectrics, molecular dynamics, nanoporous materials, plasma damage, pore sealing

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“…В работах [13][14][15] при имплантации тяжелых ионов (золото, железо, ксенон) с энергиями 50−70 кэВ в монокристалл и в оксид кремния расхождение между средними проективными пробегами, определенными в эксперименте и рассчитанными с помощью программы SRIM-2013 (TRIM) [16,17], составило от 40 до 50%, а для энергии 300 кэВ эта разница составила 14%. Также при имплантации тяжелых ионов в углерод с энергиями от 10 до 300 кэВ экспериментальные значения средних проективных пробегов оказались выше рассчитанных в TRIM на 20−40% [12].…”

Section: Introductionunclassified

Изучение Профиля Распределения Железа, Имплантированного В Кремний

Кожемяко¹,

Балакшин²,

Шемухин³

et al. 2017

Физика И Техника Полупроводников

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Проведена имплантация ионов железа с энергиями 90, 250 кэВ и дозой облучения 10 16 см −2 в моно-кристалл кремния с ориентацией (110). Методом резерфордовского обратного рассеяния в сочетании с каналированием изучены профили распределения внедренной примеси, а также профили распределения радиационных дефектов в кристаллической решетке. Экспериментальные результаты сравниваются с результатами моделирования в программе TRIM. Показано, что при энергии 4.6 кэВ/нуклон средние проективные пробеги совпадают, однако при энергии 1.6 кэВ/нуклон различие составляет 35%. Кроме того показано, что расчет некорректно учитывает дозовую зависимость при энергиях 1.6−4.6 кэВ/нуклон.

show abstract

Xe distribution in amorphous SiO 2 as a function of implantation and thermal annealing parameters

Cited by 7 publications

References 13 publications

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

Surface damage on polycrystalline β-SiC by xenon ion irradiation at high fluence

Pore sealing mechanism in OSG low‐k films under ion bombardment

Изучение Профиля Распределения Железа, Имплантированного В Кремний

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