X-ray diffraction patterns for a solid sample of Ce@C 82 that contains a mixture of two isomers, I and II, can be indexed in a face-centered cubic lattice with a lattice constant of 15.88͑5͒ Å, while x-ray diffraction patterns for Ce@C 82 isomer I alone indicate a simple cubic lattice with a lattice constant of 15.78͑1͒ Å. Rietveld refinement for the x-ray diffraction pattern of the latter, Ce@C 82 isomer I, has been carried out with a space group of Pa3 . Thin films of Ce@C 82 were first prepared by thermal deposition under ϳ10 Ϫ7 Torr. The Raman spectra for these thin films show a peak ascribable to a Ce-C 82 cage-stretching mode at ϳ160 cm Ϫ1 , implying that the valence of Ce in this structure is ϩ3. This valence of ϩ3 is supported by Ce L III -edge XANES for a thin film of Ce@C 82 . Furthermore, the local structure around the Ce ion could be determined by Ce L III -edge EXAFS for a thin-film. Transport properties of a thin film of Ce@C 82 have been studied by a four-probe method, and these demonstrate a semiconducting behavior with a small gap of 0.4 eV.