Recently, coexistence of FE and other ferrocity in several 2D systems has been theoretically proposed. [3][4][5][6][7][8][9][10][11][12][13][14] 2D materials such as graphene, [15] phosphorene [16] and MoS 2 [17] with atomicthickness and high electron-mobility may render a high density for integration and high speed for operation. Especially, a recent study demonstrated that highly uniform, solution-processable, phasepure MoS 2 nanosheets can be prepared by electrochemical intercalation, rendering scalable fabrication of large-area 2D transistor array. [18] Their epitaxial growth on substrate also allows of lattice mismatch at the van der Waals interface, facilitating their combination with semiconductor circuits. For traditional FeRAM and MRAM, their combinations with semiconductor circuits remain to be a challenge. Most robust FM materials are metallic, while traditional FE like pervoskites are wide-gap insulators with poor electron-mobility, and their epitaxial growth on silicon is hindered by the issue of lattice mismatch. FM semiconductors may be obtained by doping 3d transitionmetal (TM) ions in III-V compounds (diluted magnetic semiconductors), [19,20] while diluted FE semiconductors have not been realized by similar doping. It would be highly desirable if FE/multiferroicity can be induced by doping a semiconductor in certain domains, which can be directly integrated in the wafer like n/p doping channels. [21,22] In this work we propose a general approach to obtain diluted FE/multiferroic 2D semiconductors by TM doping. Our first-principles designs are based on previous experimental synthesis of intercalated metal dichalcogenides TX 2 such as M x MoS 2 (M = Ni, Cu, Ag, Cd), [23] (Ni, Cr) 0.33 TS 2 (T = Nb, Ta), [24,25] and Cu x Bi 2 Se 3 , [26][27][28][29][30] holding various "guest" species of atomic thickness in their interlayer space. The adopted methods include traditionally melt growth and chemical interaction method as well as electrochemical intercalation method developed recently, [28] which can efficaciously regulate the concentration of metal ions into layered. Those successful syntheses may be also attributed to the intercalated metal ions such as Ni, Cu, and Ag relatively with much lower cohesive energy in their bulk metals compared with other 3d metals such as Ti or V. A vertical switchable polarization together with a magnetic moment can be induced upon the intercalation of those TM ions. As a result, those 2D high-mobility semiconductors can be endowed with multiferroicity via such doping, and the magnetism can be tuned upon FE switching, rendering efficient "electric writing + magnetic reading" for high-density data storage.The direct combination of high-mobility semiconductors and efficient multiferroic memories within the same material is desirable for integration of multifunctional electronics but remains a challenge. Stimulated by recent progress on intercalation of layered materials, first-principles evidence of 2D room-temperature multiferroicity in a series of doped metal dichalcogen...