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Chaudhuri, J.; George, Jino; Kolske, D. D.; Wickenden, A. E.; Henry, R.L.; Rek, Z. U.

doi:10.1023/a:1014557604325

Cited by 8 publications

(5 citation statements)

References 8 publications

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“…[10][11][12] The role of AlN interlayers to reduce threading dislocation densities (TDD) has been reported and correlated with the influence on the compressive stress developed in the GaN films. 13 Zhang et al demonstrated the influence of the growth temperature and stress on GaN crystals grown on a SiC template by the HVPE method. 14 Recently, our group has reported defect reduction by the stress relaxation of GaN grown on a GaN epilayer (MOCVD grown GaN template, Lumilog) by plasma assisted molecular beam epitaxy (PAMBE).…”

Section: Introductionmentioning

confidence: 99%

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE

Krishna

Aggarwal

Mishra

et al. 2016

Phys. Chem. Chem. Phys.

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The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.

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Section: Introductionmentioning

confidence: 99%

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE

Krishna

Aggarwal

Mishra

et al. 2016

Phys. Chem. Chem. Phys.

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“…Also, the crystallinity of GaN is reportedly closely related to the buffer growth temperature [13], and much research has focused on the role of a low-temperature buffer [14]. However, in the present experiment, we used an AlN template for the growth of a GaN thick film [15][16][17][18]. Therefore, an LT-buffer was not necessary and the hightemperature GaN (HT-GaN) growth was enough to obtain a highquality GaN film.…”

Section: Resultsmentioning

confidence: 96%

The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

Cho¹,

Ha²,

Jung³

et al. 2010

Journal of Crystal Growth

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“…By growing a second nucleation layer we introduce to the structure grains which are not misaligned so the number of edge dislocation is decreased and total resistivity of the samples decreased as well. Another possible explanation is that the total number of dislocations is reduced [22] and electrically active point defects start to be dominant. However, because all HT layers were grown in the same conditions and total number of dislocations is similar, we assume that the number of point defects is equal for all the samples.…”

Section: Resultsmentioning

confidence: 99%

Resistivity control of unintentionally doped GaN films

Grzegorczyk¹,

Macht

Hageman

et al. 2005

phys. stat. sol. (c)

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GaN epilayers were grown on sapphire substrates via low temperature GaN and AlN nucleation layers (NL) by metalorganic chemical vapor phase epitaxy (MOCVD). The morphology of the individual NLs strongly depends on the carrier gas used during the growth and recrystallization and this is the key factor for control of the resistivity of the GaN layer grown on it. The GaN nucleation layer grown in presence of N 2 has a higher density of islands with a statistically smaller diameter than the samples grown in H 2 atmosphere. The NL grown in N 2 enables the growth GaN with a sheet resistivity higher than 3×104 Ω⋅cm as opposed to a 0.5 Ω cm value obtained for the NL grown in H 2 . Introduction of an additional intermediate (IL) low temperature (GaN or AlN) nucleation layer changes the GaN epilayer resistivity to about 50 Ω⋅cm, regardless of the carrier gas used during the growth of the IL. Defect selective etching demonstrated that control of the type and density of the dislocations in GaN enables the growth of highly resistive layers without any intentional acceptor doping (Mg, Zn). It will be demonstrated that by changing the ratio of edge type to screw dislocations the resistivity of the layer can be changed by a few orders of magnitude.

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Untitled

Cited by 8 publications

References 8 publications

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE

The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

Resistivity control of unintentionally doped GaN films

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