X‐ray triple‐crystal diffractometer investigation of arsenic implanted silicon after pulsed laser irradiation

Zaumseil, P.; Winter, U. J.; Galler, R.

doi:10.1002/crat.2170190511

Cited by 4 publications

References 12 publications

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Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

Grenzer¹,

Pietsch

Bischoff

2005

Physica Status Solidi (a)

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Strain analysis of a laterally patterned Si‐wafer was carried out utilizing X‐ray grazing‐incidence diffraction with synchrotron radiation. The lateral patterning was done by focused ion beam implantation using an ion source of liquid AuGeSi alloy. Samples were prepared by either 35 keV Au+ ions (dose: 0.2, 2 × 1014 cm–2) or 70 keV Ge++ ions (dose: 8 × 1014 cm–2). It was shown that due to implantation a periodical defect structure is created consisting of both implanted and not implanted stripes. The evaluated depth distribution of defects within the implanted stripes corresponds to that obtained by TRIM calculation. The induced strain distribution, however, shows no periodicity. This can be explained by an overlap of the strain fields created in each implanted stripe. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

Grenzer¹,

Pietsch

Bischoff

2005

Physica Status Solidi (a)

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On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry

Zaumseil¹

1985

phys. stat. sol. (a)

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Dedicated to P r o f . D r . Dr. Ing. h.c. R. ROMPE on the occasion of h i s 80th birthday X-ray diffractometry is a widely used method to investigate strain fields in s u rface l a y e r s of otherwise perfect single crystals. Especially the sensitive method to determine the depth profile of strain induced in semiconducting materials by technological processes. of parallel double-crystal diffractometry (DCD) offers many possibilitiesIn /1/ i t was shown that in the c a s e of very thin disturbed surface layers, where the intensity from this layer is very weak, the influence of diffuse scatbering becomes apparent. On perfect crystals this effect causes a distinct intensity increase in the tails of the rocking curve leading to a deviation from the theoretically expected l,AS intensity falling off. Intensity oscillations in the rocking curve of crystals with surface strain profile are suppressed.Computer simulations with such rocking curves would lead to wrong deformation profiles. In /1/ a correction was introduced relating the scattered intensity to dynamical Bragg diffraction that led to satisfactory strain distributions.Triple-crystal diffractometry of parallel (n, -n, n) setting (TCD) offers the 2 possibilities to measure the reflection curve of disturbed crystals very sensitively /2/ and to discriminate the influence of diffuse scattering during the measurement. Whereas the wide entrance of the counter of a DCD integrates the diffuse scattered intensities in a wide angular range, the TCD with an analyzer crystal behind the sample r e g i s t e r s nearly only the intensity in the angular interval of the width of the analyzer reflection curve.In principle, TCD intensity curves measured by rotation of the analyzer crystal (As) a t fixed sample position (a) have the following form in the case I) PSF 409, DDR-1200 Frankfurt (Oder), GDR.

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Chapter 9 X-Ray Diffraction Techniques

Zaumseil

1997

Semiconductors and Semimetals

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X‐ray triple‐crystal diffractometer investigation of arsenic implanted silicon after pulsed laser irradiation

Cited by 4 publications

References 12 publications

Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

Grazing‐incidence diffraction strain analysis of a laterally patterned Si wafer treated by focused Ge and Au ion beam implantation

On the Increased Sensitivity of X-Ray Rocking Curve Measurements by Triple-Crystal Diffractometry

Chapter 9 X-Ray Diffraction Techniques

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