X-ray topography of SrLaGaO4 single crystals

Malinowska, A.; Lefeld‐Sosnowska, M.; Pajączkowska, A.; Kłos, A.

doi:10.1016/j.jcrysgro.2005.12.117

Cited by 10 publications

(13 citation statements)

References 12 publications

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“…1a). The same result was observed for another samples studied earlier [8][9][10][11][12][13][14][15]. In the outer part of these crystals a lot of linear black diffraction contrasts and volume defects contrasts of irregular shapes were observed.…”

Section: Resultssupporting

confidence: 86%

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Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO₄

et al. 2008

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SrLaGaO 4 single crystals are perspective substrate materials for high temperature superconductors thin films, elements of thermal radiation receivers and other electronic devices. The defect structure of the Czochralski grown SrLaGaO 4 crystal was investigated by means of X-ray topography exploring both conventional and synchrotron sources. The crystal lattice defects in the core region of the crystal were investigated. The regular network of defects arranged in rows only in 100 direction was observed. Owing to high resolution of synchrotron radiation white beam back reflection topographs one can distinguish individual spots forming the lines of the rows. It can be supposed that these elongated rod-like volume defects are located in {100} lattice planes forming a kind of walls. They are built approximately of the same phase as crystal but crystallize at a different moment than a rest of the crystal due to the constitutional supercooling.

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Section: Resultssupporting

confidence: 86%

“…The results of our previous studies concerning SLG crystals were shown in Refs. [8][9][10][11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO₄

et al. 2008

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“…10d,e) are observed in the outer region [2729]. They are related to the faceted growth which probably occurs at the end of the growth process and results in cellular structure of the crystal; the beginning of interface uctuations and cellular growth seems to take place at the core edge, where growth on (001) plane switches to growth on {103} planes [25,28]. The optical transmission microscopy investigations reveal also some dendritic forms, which often coexist with the cellular structure.…”

Section: The Czochralski Grown Oxide Materialsmentioning

confidence: 99%

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

Lefeld‐Sosnowska

Malinowska

2013

Acta Phys. Pol. A

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X-ray diraction topography is one of basic diagnostics tools serving for visualisation of single crystal lattice defects. Defects of various kinds can be observed. The present study is a review of topographic results obtained in the X-ray laboratory of the Institute of Experimental Physics, University of Warsaw, for three families of single crystals grown by the Czochralski method: (i) silicon (Si) and Si1−xGex, (ii) selected binary REVO4 oxides and (iii) selected ternary ABCO4 oxides. The eect of chemical composition, growth conditions and post growth thermal annealing on the defect appearing in crystals is discussed. Various defects are revealed: the growth dislocations (some early Si crystals), the composition-gradient-induced lattice deformation (Si1−xGex, solid solutions CaxSr1−xNdAlO4), defects generated in Si after the post growth thermal processes, oriented elongated rod-like macro-defects tending to form networks within the crystal core, cellular structure in the outer shell (SrLaGaO4), and variously developed block structure (in selected binary REVO4 crystals).

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“…Together with projection topographs, the section topographs, obtained with a beam highly collimated by a 5 m slit, were taken with appropriately longer exposure time. The sample has been earlier investigated by conventional X-ray topography with Cu K␣ 1 radiation in back reflection geometry [10,11]. …”

Section: Experimental Techniquementioning

confidence: 99%

“…Dislocations propagated from the seed [8] and growth striations [9] in the SLA crystals grown in [1 0 0] direction were observed. Crystal lattice defects in SLG crystals grown in [0 0 1] direction in N 2 atmosphere with different O 2 contents were investigated by conventional X-ray topography in [10]. SLG crystals grown in [1 0 0] direction were studied by some of the present authors with X-ray diffraction topography [11].…”

Section: Introductionmentioning

confidence: 99%

Synchrotron white beam topography studies of SrLaGaO4 crystals

Wieteska

Wierzchowski

Graeff³

et al. 2005

Journal of Alloys and Compounds

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X-ray topography of SrLaGaO4 single crystals

Cited by 10 publications

References 12 publications

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO₄

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO₄

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

Synchrotron white beam topography studies of SrLaGaO4 crystals

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X-ray topography of SrLaGaO4 single crystals

Cited by 10 publications

References 12 publications

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO4

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO4

X-ray Diffraction Topography - Investigation of Single Crystals Grown by the Czochralski Method

Synchrotron white beam topography studies of SrLaGaO4 crystals

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Product

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Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO₄

Conventional and Synchrotron X-Ray Topography of Defects in the Core Region of SrLaGaO₄