X-ray topographic study of dark-spot defects in GaAs-Ga1−<i>x</i>Al<i>x</i>As double-heterostructure wafers

Kishino, Shigenobu; Nakashima, Hisao; Ito, Ryoichi; Nakada, Osamu

doi:10.1063/1.88430

Cited by 24 publications

(4 citation statements)

References 8 publications

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“…By analogy with GaAs (6) and InP (7) diodes, the electrical characteristics of CdTe p-n junctions should also depend on the dislocation density. Finally, from the studies of LPE growth on GaP (8), GaAs (9), and InP (10) substrates, the defect density of epitaxial layers is directly correlated with that of the substrate. The defect density of CdTe crystals is thus an important parameter for device applications.…”

Section: Discussionmentioning

confidence: 99%

“…Recently, intrinsic gettering (IG) in CZ silicon wafers has been noticed to suppress surface microdefects which are harmful to IC devices such as bipolar and MOS (1-7). Moreover, it has been reported that the IG effect can be enhanced using two-step annealing before device processing (6)(7)(8)(9). In order to utilize IG effectively, it is important to examine the thermal properties and behavior of inner defects and then to evaluate the effectiveness of IG in wafers taken from various portions of seed to tail of a crystal ingot in connection with the establishment of critical annealing conditions to achieve IG effectively.…”

Section: Methodsmentioning

confidence: 99%

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Evaluation of Defects in CdTe Using a Simple Cathodoluminescence Technique

Chin¹

1982

J. Electrochem. Soc.

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normalCdTe has a low luminescence efficiency and its surface readily deteriorates by electron or photon excitation at the power levels generally required to perform spatially resolved cathodoluminescence (CL) or photoluminescence scanning. Previous CL studies employed a sophisticated mirror system to provide the necessary collection efficiency to image defects in normalCdTe . In this paper, we demonstrate a simple high collection efficiency CL technique using a solid‐state photodiode within the sample chamber of a scanning electron microscope. A comparison is made of the patterns formed by the CL dark spots and the etch features produced by a known defect etchant.

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Section: Discussionmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Evaluation of Defects in CdTe Using a Simple Cathodoluminescence Technique

Chin¹

1982

J. Electrochem. Soc.

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“…The characteristics of rapid degradation are: (1) the optical output decreases rapidly during constant current operations (or, in the case of constant output power operations, there is either a rapid increase in the operating current or a rapid decrease in the internal quantum efficiency) and ( 2) non-emitting regions are formed within the emitting region (the active region). There are three types of non-emitting regions: i) dark-line defects (DLDs), 9) ii) dark-spot defects (DSDs), 10) and iii) dark regions. 11) Here, the half-life of a component (the time taken for its output to drop to half its initial level) is less than 100 hours at room temperature.…”

Section: Outline Of the Three Degradation Modes Of Semiconductor Opti...mentioning

confidence: 99%

On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

Ueda

2010

Jpn. J. Appl. Phys.

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This paper describes studies on the reliability of semiconductor optical devices over the course of more than three decades, dating back to the early 1970s. First, a retrospective look is taken at the evolution of optical device development and reliability studies. Second, the three main degradation modes for optical devices (rapid degradation, gradual degradation, and catastrophic failure) are outlined. Third, the results of the classical research into rapid degradation that was carried out in the 1970s and 1980s are presented as an introduction to a systematic discussion of the research that followed-remarkable research into gradual degradation. #

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“…8 (a The characteristics of rapid degradation are: 1) the optical output decreases rapidly during constant current operations (or, in the case of constant output power operations, there is either a rapid increase in the operating current or a rapid decrease in the internal quantum efficiency) and 2) non-emitting regions are formed within the emitting region (the active region). There are three types of non-emitting regions: i) dark-line defects (DLDs) (23), ii) dark-spot defects (DSDs) (24), and iii) dark regions (25). Here, the halflife of a component (the time taken for its output to drop to half its initial level) is less than 100 hours at room temperature.…”

Section: Device Degradationmentioning

confidence: 99%

A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices

Ueda¹

2010

ECS Trans.

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Materials issues in III-V alloy semiconductors and our current understanding of degradation mechanism in III-V compound semiconductors and optical devices are systematically reviewed. Generation of defects and thermal instability are among these issues for these systems. In each phenomenon, generation mechanism of defects and structure are clarified. Three major degradation modes of optical devices, rapid degradation, gradual degradation, and catastrophic failure are briefly summarized, and the rapid and the gradual degradation modes are discussed in more detail. Materials Issues in III-V Alloy SemiconductorsMaterials issues in the growth of III-V alloy semiconductor thin films are focused on (1). These include the generation of various kinds of defects during growth, the generation of modulated structures due to spinodal decomposition and atomic ordering associated with growth kinetics on the surface. Defect generationDefect generation is one of the important materials issues in III-V alloy semiconductor thin film growth. Defects introduced during growth are classified into two types: interface defects and bulk defects.Interface defects. Defects belonging to this type are stacking faults, V-shaped dislocations, dislocation clusters, microtwins, inclusions, and misfit dislocations. Interface defects due to contamination, thermal damage of the substrate, local segregation at the interface, and those due to lattice-mismatch are schematically shown in Figs. 1 and 2.The stacking faults shown in Fig. 1(a) are generated from the hetero-interface, extending along the four equivalent {111} planes, forming a stacking fault tetrahedron (2). In MBE-grown crystals, they often correspond to surface defects (usually observed as "oval defects" lying along the <110> direction).Pair pits are often observed on the chemically etched surface of thin films. In the TEM image of the area which includes pair pits, small dislocation segments are observed. From the shape of the dislocations, this dislocation pair is assumed to comprise a Vshaped dislocation (see Fig. 1(b)). Occasionally, preferential etching takes place at such V-shaped dislocations (3).

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X-ray topographic study of dark-spot defects in GaAs-Ga1−xAlxAs double-heterostructure wafers

Cited by 24 publications

References 8 publications

Evaluation of Defects in CdTe Using a Simple Cathodoluminescence Technique

Evaluation of Defects in CdTe Using a Simple Cathodoluminescence Technique

On Degradation Studies of III–V Compound Semiconductor Optical Devices over Three Decades: Focusing on Gradual Degradation

A Review of Materials Issues and Degradation of III-V Compound Semiconductors and Optical Devices

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