2020
DOI: 10.1016/j.jcrysgro.2020.125753
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X-ray topographic study of Bridgman-grown CdZnTeSe

Abstract: We have characterized the structural quality of Cd0.9Zn0.1Te0.93Se0.07 ingot grown by the vertical Bridgman growth technique. The structural quality of Cd0.9Zn0.1Te0.93Se0.07 ingot along the length was investigated via X-ray topography in the reflection mode using a white beam synchrotron radiation source. The X-ray topography data revealed the presence of very few sub grain boundaries and no sub-grain boundary network for the CdZnTeSe samples used in this study.

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Cited by 9 publications
(4 citation statements)
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“…The defect densities, sub-grain boundary network, residual stress, surface disorder, and presence of Te inclusions near the sample surface can have significant contribution towards broadening of the XRD peak. It is to be noted that, qualitatively, we did not observe the presence of considerable residual stress in any of our CZTS samples with selenium concentrations ranging from 2-7%, as characterized by X-ray topography and infrared (IR) transmission investigation through crossed polarizers [19][20][21]26,31,32 . The ingots were also found to be stress free, and no lattice distortion was observed near the periphery of the wafer touching the ampoule wall 19,32 .…”
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confidence: 53%
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“…The defect densities, sub-grain boundary network, residual stress, surface disorder, and presence of Te inclusions near the sample surface can have significant contribution towards broadening of the XRD peak. It is to be noted that, qualitatively, we did not observe the presence of considerable residual stress in any of our CZTS samples with selenium concentrations ranging from 2-7%, as characterized by X-ray topography and infrared (IR) transmission investigation through crossed polarizers [19][20][21]26,31,32 . The ingots were also found to be stress free, and no lattice distortion was observed near the periphery of the wafer touching the ampoule wall 19,32 .…”
mentioning
confidence: 53%
“…It is to be noted that, qualitatively, we did not observe the presence of considerable residual stress in any of our CZTS samples with selenium concentrations ranging from 2-7%, as characterized by X-ray topography and infrared (IR) transmission investigation through crossed polarizers [19][20][21]26,31,32 . The ingots were also found to be stress free, and no lattice distortion was observed near the periphery of the wafer touching the ampoule wall 19,32 . The CZTS samples were free from sub-grain boundary networks and observed to contain a very low amount of Te inclusions compared to typical CZT.…”
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confidence: 53%
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“…According to previous research on (Cd,Zn)Te and (Cd,Zn)(Te,Se) [ 8 , 47 ], the presence of selenium plays a crucial role in inhibiting the development of sub-grain boundary networks and increases the hardness of the quaternary material (Cd,Zn)(Te,Se). Additionally, selenium significantly reduces the concentration of tellurium inclusions [ 46 ].…”
Section: Introductionmentioning
confidence: 99%