X‐Ray Topographic Investigation of Silicon Single Crystals Heavily Doped with Sb

Abstract

Heavily Sb doped silicon crystals grown by Czochralski method were investigated using X‐rays methods. It is shown that growth striation contrast is caused by inhomogeneous Sb distribution. While approaching the lower part of crystals their volume is being contaminated by dispersive particles of noncontrolled impurities that results in decrease of anomalously transmitted X‐rays and weakening of the contrast in topographical growth striation image. In the canal connected with the facet effect crystal structure is less damaged by foreign inclusions.