X-ray study of lattice strain in boron implanted laser annealed silicon

Larson, B. C.; Barhorst, J. F.

doi:10.1063/1.328069

Cited by 91 publications

(10 citation statements)

References 15 publications

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“…The application to problems of thin films and surfaces is evident and was developed soon after the equations were established. The development of a solution started with the investigation of compositional and stress variations as introduced into semiconductors by doping with ion implantation techniques [19,20]. Later, the formalism was also applied to the simulation of the diffraction pattern from epilayer systems [21].…”

Section: High-resolution Rocking Curves and Prof Iles From Layer Strumentioning

confidence: 99%

High‐Resolution X‐ray Diffraction

Birkholz¹,

Fewster²

2005

Thin Film Analysis by X‐Ray Scattering

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Epitaxial thin films are in the focus of this chapter after the various structural characteristics of polycrystalline thin films have been presented in previous ones. In epitaxial layers the crystal lattice of the underlying single-crystal substrate is intended to be continued into the thin film. These material systems thus exhibit a high degree of crystalline perfection. However, some deviations from the perfect crystal lattice do occur in epilayers and it is the measurement of these deviations with which this chapter is concerned. As before, the structural information is derived from the position, intensity and line shape of Bragg ref lections. However, in addition, the high degree of crystallinity necessitates refining the methodology with respect to both experimental equipment and theoretical understanding.Special experimental equipment has to be introduced in order to resolve the very closely spaced peaks that occur in the diffraction pattern of epilayer-substrate material systems. This is the reason for naming the field high-resolution x-ray diffraction (HRXRD). It often happens that observable peaks are as close as 0.001°a part and that the structural information to be derived deserves the precise measurement of this spacing. This cannot be obtained with the diffractometer settings presented so far for the investigation of polycrystalline material. The precision ∆d/d by which interplanar spacings may be determined is given bywhere ∆λ is the spectral width or bandwidth of the radiation used and δ is the beam divergence. In order to arrive at the low ∆d/d values mentioned above crystal monochromators and analyzers have to be introduced into the beam path; these select only those x-rays that are Bragg ref lected from a single crystal or a whole set of them. These systems are presented in Instrumental Box 8. An overview of ∆d/d ratios relevant to XRD and HRXRD is given in Fig. 7.1 that has been taken from the seminal paper of Bartels [1]. The diagram clearly shows the necessity of achieving an instrumental resolution in the region of seconds of arc in order to investigate thin-film devices produced in the electronic industry. Moreover, the theoretical basis has to be extended in order to interpret the Bragg peaks of epitaxial films. Use has so far been made of the kinematical theory of xray diffraction in this book, but a proper understanding of epitaxial film-substrateThin Film Analysis by X-Ray Scattering. M. Birkholz

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Section: High-resolution Rocking Curves and Prof Iles From Layer Strumentioning

confidence: 99%

High‐Resolution X‐ray Diffraction

Birkholz¹,

Fewster²

2005

Thin Film Analysis by X‐Ray Scattering

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“…These measurements were time resolved, but did not take advantage of the pulsed nature of the radiation. The temporal resolution is obtained from the detector whereas the synchrotron radiation is used as continuous wave (CW) background illumination [7].…”

Section: The Historical Background To Combined Laser Synchrotron Radimentioning

confidence: 99%

Laser and synchrotron radiation pump-probe x-ray diffraction experiments

Larsson

2001

Meas. Sci. Technol.

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Recent developments have allowed x-ray diffraction techniques at synchrotron radiation facilities to be employed with a temporal resolution of around 1 ps. These developments are the availability of firstly, high brightness third-generation x-ray sources, secondly, passively mode-locked lasers with 100 fs temporal duration and thirdly, averaging streak cameras with sub-picosecond temporal resolution. In this paper, we discuss how these novel devices are combined in time-resolved x-ray diffraction experiments at synchrotron radiation facilities.

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“…Box 49, 1525 Budapest, Hungary. crystals [19][20][21][22], epitaxial layers [23] and compound semiconductors [19,24]. Most of these papers deal with X-ray measurements of high-dose (greater than or equal to l015 ions cm-2), low-energy (less than or equal to 200 keV) implanted silicon.…”

Section: Introductionmentioning

confidence: 99%

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

et al. 1993

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High-resolution X-ray diffraction (HR-XRD) was investigated as a possible technique for the qualitative analysis of damage annealing of low-dose, high-energy implanted (001) silicon, implanted with dopants smaller than the host atom. The choice of proper Bragg reflection for the rocking-curve measurements is shown to be of crucial importance. The graphic construction of the Ewald sphere is a useful aid for this purpose. As the in-plane lattice constant is confined by the underlying substrate, a change occurs in the perpendicular direction only. Therefore the (026)~ reflection appears to be the most suitable for the detection of changes in lattice constant caused by implantation damage. Qualitative analysis of rocking curves of P-and B-implanted Si samples was compared with electrical measurements and cross-section transmission electron micrographs. It could be established that the minimum implantation doses of P and B at energies ranging from 0.5 to 1.5 MeV, for which HR-XRD is sensitive enough, are about 1.5 x 10 ~4 cm -2 and 5 x 10 ~3 cm -2 respectively. The minimum peak temperature needed for complete damage anneal by transient-rapid thermal annealing was about 1400 K for all doses considered.

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X-ray study of lattice strain in boron implanted laser annealed silicon

Cited by 91 publications

References 15 publications

High‐Resolution X‐ray Diffraction

High‐Resolution X‐ray Diffraction

Laser and synchrotron radiation pump-probe x-ray diffraction experiments

Optimization of ion implantation damage annealing by means of high-resolution X-ray diffraction

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