X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport

Popova, T. B.; Bakaleĭnikov, L. A.; Zamoryanskaya, M. V.; Flegontova, E. Yu.

doi:10.1134/s1063782608060079

Cited by 4 publications

(3 citation statements)

References 6 publications

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“…In our measurements, we followed analogous method as for calculation of the barrier layer content in light emitting device structure 7. However there were some differences.…”

Section: Resultsmentioning

confidence: 99%

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Application of the electron probe microanalysis in nitride‐based heterostructures investigation

Kuznetsova

Байдакова

Flegontova

et al. 2011

Physica Status Solidi (a)

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The aim of this work was development of electron probe microanalysis (EPMA) technique suitable for composition determination of nanoscale layers. Proposed technique allows to determine the content of thin layers lying beneath the surface including single quantum wells (SQWs). The method is based on Monte‐Carlo numerical simulations. Application of this technique to the nitride heterostructures with SQWs and multiple quantum wells (MQWs) was demonstrated. Peculiarities of the method are discussed. Electron trajectories in GaN sample with In0.1Ga0.9N single quantum well. Simulation was made by Monte‐Carlo method.

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“…In our measurements, we followed analogous method as for calculation of the barrier layer content in light emitting device structure 7. However there were some differences.…”

Section: Resultsmentioning

confidence: 99%

“…Physical models used in the Monte‐Carlo calculation are described in detail in Ref. 7. Differential electron flux density is related to the electron flux depth distribution.…”

Section: Resultsmentioning

confidence: 99%

Application of the electron probe microanalysis in nitride‐based heterostructures investigation

Kuznetsova

Байдакова

Flegontova

et al. 2011

Physica Status Solidi (a)

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“…Our latest investigation showed the possibility to measure the composition of layers lying at some depth beneath the surface and of thin layers with thickness of a few nanometers by using electron probe microanalysis. [2][3][4] This method was used in this work for determination of layer composition and homogeneity.…”

Section: Introductionmentioning

confidence: 99%

Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis

Zamoryanskaya

Kuznetsova

Popova

et al. 2010

Journal of Elec Materi

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Complementary nondestructive electron probe methods were used for characterization of semiconductor multilayer structures. We used cathodoluminescence and electron probe microanalysis for studying laser heterostructures based on GaAs/AlGaAs/InGaAs/GaAs and InGaN/GaN. Our latest investigation showed the possibility of measuring the composition of buried layers and determining the composition of thin nanoscale layers by electron probe microanalysis. Simultaneous use of local cathodoluminescence is very useful for defect study in bulk semiconductors, epilayers, and multilayer heterostructures. This method allows characterization of charge-carrier transport properties and diffusion length in multilayer structures, using the variation of the electron beam energy and calculation of the electron penetration depth.

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Non-destructive evaluation of depth, thickness and composition of single ZnCdSe nanolayers buried in II-VI heterostructures

Karavaev

Иванова

Popova

et al. 2018

Superlattices and Microstructures

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X-ray spectrum microanalysis of semiconductor epitaxial heterostructures on the basis of a monte carlo simulation of electron transport

Cited by 4 publications

References 6 publications

Application of the electron probe microanalysis in nitride‐based heterostructures investigation

Application of the electron probe microanalysis in nitride‐based heterostructures investigation

Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis

Non-destructive evaluation of depth, thickness and composition of single ZnCdSe nanolayers buried in II-VI heterostructures

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