X-ray spectroscopy of the valence band electronic structure in high-deposition-rate a-Si:H

Belin-Ferré, Esther; Rocque, A. Gheorghiu-de la; Fontaine, Marie; Thirion, J.; Brinza, Monica; Willekens, J; Adriaenssens, Guy

doi:10.1016/j.jnoncrysol.2004.02.062

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“…The high energy broadening could be ascribed to the presence of occupied defect states in the forbidden gap of the amorphous sample, the slight low energy narrowing to the difference between the crystalline and amorphous states and the poor resolution of the 1827 eV structure for the amorphous samples to the fact that the stoichiometry of the film is not exactly that of SiC [21].…”

Section: Methodsmentioning

confidence: 99%