X-ray spectroscopy investigation of the electronic structure of SnSx and Li0.57SnS2 compounds

Rocque, A. Gheorghiu-de la; Belin-Ferré, Esther; Fontaine, Marie; Sénémaud, C.; Olivier‐Fourcade, J.; Jumas, J.‐C.

doi:10.1080/13642810008216515

Cited by 9 publications

(8 citation statements)

References 8 publications

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“…There is a general agreement between the published experimental S Kβ XES spectra of SnS 2 as shown by the spectra labelled XES 1 and XES 2 in Fig. .…”

Section: Resultssupporting

confidence: 81%

“…. For SnS, the spectrum reported by Sugiura et al is similar to that of SnS 2 except for a narrower band whereas the spectrum measured by Belin et al is broader and clearly shows a shoulder at the lower energy side . By considering the dipolar approximation, the S Kβ XES spectra represent transitions from the S p‐like valence states to the S 1s core level with photon energies in the range 2460–2470 eV.…”

Section: Resultsmentioning

confidence: 66%

“…Theoretical and experimental S Kβ XES spectra of SnS 2 and SnS. The experimental spectra are denoted XES 1 , XES 2 and XES 1′ . The origin of the energy is taken at the top of the valence band.…”

Section: Resultsmentioning

confidence: 99%

“…X‐ray photoemission spectroscopy (XPS) , angular resolved XPS (ARXPS) , X‐ray emission spectroscopy (XES) , polarised XES and ultraviolet photoemission spectroscopy (UPS) from energy distribution curves were used to investigate the valence band structure of SnS 2 , while the conduction band was studied by electron energy loss spectroscopy (EELS) , UPS by taking constant initial state curves (CIS) , bremsstrahlung isochromat spectroscopy (BIS) and X‐ray absorption spectroscopy (XAS) . In what concerns SnS, optical absorption was used to determine the electronic structure near the band gap of both thin films and single crystals whereas the valence band was examined by XPS and XES . Finally, additional information about the local electronic structure of Sn in SnS 2 and SnS was obtained by 119 Sn Mössbauer spectroscopy .…”

Section: Introductionmentioning

confidence: 99%

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Electronic structures of SnS and SnS₂

Lippens

Khalifi

Womes

2016

Physica Status Solidi (b)

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The electronic structures of SnS and SnS2 have been investigated from first principles calculations to provide a full analysis of the valence and conduction bands. A good agreement with experimental X‐ray photoelectron spectroscopy (XPS), S Kβ X‐ray emission spectroscopy (XES) and X‐ray absorption spectroscopy (XAS) at S K, Sn L1 and Sn L3 edges is found and the main features of the spectra are analysed in terms of chemical bonding. In the case of XAS, we show that core‐hole effect is significant at the S K edge. The origin of the 119Sn Mössbauer parameters has been also investigated. The increase of the isomer shift from SnS2 to SnS is related to the increase of Sn 5s electron population and correlated to the decreasing intensity of the lowest energy peak of the XAS spectra at the Sn L3 edge. The values of the quadrupole splitting evaluated from the electric field gradients at the nucleus are explained from the Sn 5p electron anisotropy. Finally, the effects of interlayer interactions and intralayer local distortion are examined by considering different structural models.

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“…There is a general agreement between the published experimental S Kβ XES spectra of SnS 2 as shown by the spectra labelled XES 1 and XES 2 in Fig. .…”

Section: Resultssupporting

confidence: 81%

Section: Resultsmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electronic structures of SnS and SnS₂

Lippens

Khalifi

Womes

2016

Physica Status Solidi (b)

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“…Pressure induced structural phase transition in SnS is reported by Ehm et al 8. Electron energy loss spectroscopy 14, photoemission spectroscopy 15–17 and X‐ray emission spectroscopy 18 have been applied to examine changes in the chemical environment and electronic structure of SnS on varying the content of S. The optical properties have been studied through infrared reflectivity measurements, Raman spectroscopy and photoacoustic spectroscopy 6, 18–20. Thus, it is evident that studies on ground‐state properties of IV–VI semiconductors are rare.…”

Section: Introductionmentioning

confidence: 99%

Electron momentum distribution in SnS

Sharma¹,

Sharma²,

Mishra³

et al. 2009

Physica Status Solidi (b)

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Lasing is observed from carbon nanodots (C‐dots) dispersed into a layer of poly(ethylene glycol) coated on the surface of optical fibers under 266 nm optical excitation. This is due to the enhancement of photoluminescence intensity via the esterification of carboxylic groups of the C‐dots, and the formation of high‐Q cylindrical microcavities to support second‐type whispering gallery modes.

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