X-ray scattering study of hydrogen implantation in silicon

Abstract

The effect of hydrogen implantation in silicon single crystals is studied using high-resolution x-ray scattering. Large strains normal to the sample surface are evidenced after implantation. A simple and direct procedure to extract the strain profile from the scattering data is described. A comparison between different crystallographic orientation of the implanted silicon surface is then presented, namely, for ⟨100⟩, ⟨110⟩, and ⟨111⟩ orientations, showing a dependence that can be related to bond orientation. Effect of annealing on the stressed structure is finally described.

Lattice Strain Measurements in Hydrogen Implanted Materials for Layer Transfer Processes

“…X-Ray scattering measurements have been also used to investigate hydrogen implantation in silicon with different crystallographic orientations (Sousbie et al, 2006). The authors measured the strain in <100>-, <110>-and <111>-oriented silicon wafers through ω/2θ scans, and support their results with TEM, IR spectroscopy and SIMS measurements.…”

“…Additionally, even at these high doses, doubling the dose doubles the strain , showing that the linear relationship between dose and strain exists at the high end of exfoliation implant conditions. Si implanted at an even higher dose produces the same strain -dose relationship (Sousbie et al, 2006) -i.e., K holds for those conditions. This result further supports the concept that the quantitative analysis of the implant-induced strain profile is suitable for a wide range of hydrogen-implanted materials used in exfoliation and layer transfer studies.…”

Mn fraction substitutional site and defects induced magnetism in Mn-implanted 6H-SiC

“…3 shows HRXRD curves measured on the three studied samples and the corresponding strain profile as determined from these curves using the Stepanov procedure [31,34]. It is well known that such XRD analysis is not depth sensitive at the scale of the implanted layer [35]. Thus, the depth of the maximum damage (f D ) determined by RBS/C (see Fig 1) is taken as a reference for the depth of the maximum of the simulated strain.…”

Strain profile of (001) silicon implanted with nitrogen by plasma immersion

“…As already mentioned, this is a good approximation in low damage cases and has been successfully used before. 10,11,14 However, calculations lead to very small, nonsignificant DW factors. This means that below the amorphous layer the implanted region is rather ordered, at least where the DW factor is concerned.…”

“…This method has been widely employed in the characterization of ion beam implanted samples. [9][10][11][12][13] Lattice disorder lowers the diffracted intensity, and it is usually accounted for by introducing a depth dependent Debye-Waller ͑DW͒ factor. Sometimes, the solution is not unique and two or more combinations of a DW factor and strain profiles produce equally good fits to the measured x-ray spectra.…”