1977
DOI: 10.1063/1.324149
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X-ray photoemission spectroscopy studies of Sn-doped indium-oxide films

Abstract: The In and Sn 3d3/2 and 3d5/2 ESCA peaks and the oxygen 1s peak of Sn-doped In2O3 films were compared with those for In2O3 films and In2O3, SnO, SnO2, and Sn3O4 powders. Comparison of as-grown with sanded surfaces revealed Sn-rich surface layers in.those films having good optical and transport properties. These experimental fins are interpreted with a schematic energy-band model and the assumption that film darkening in Sn-doped In2O3 films is caused by the formation and growth of an Sn3O4-like second phase in… Show more

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Cited by 1,002 publications
(450 citation statements)
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“…4 (a) [26][27]. The lower intense peaks at binding energies 930.7 and 950.3 eV are close to that of Cu 2 S but we couldn't obtain this compound peaks from the XRD results, while the dominant peaks at the binding energies of 929.7 and 949.5 eV did not match those of any ternary compound according to the XPS database [25].…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…4 (a) [26][27]. The lower intense peaks at binding energies 930.7 and 950.3 eV are close to that of Cu 2 S but we couldn't obtain this compound peaks from the XRD results, while the dominant peaks at the binding energies of 929.7 and 949.5 eV did not match those of any ternary compound according to the XPS database [25].…”
Section: Resultsmentioning
confidence: 99%
“…4 (c) The S 2p core level and corresponding de-convoluted spectra (Fig. 4 (d) [24][25][26][27][28][29][30]. Therefore, combining the results of the binding energy values from the XPS and the phases from the XRD we assign the studied phase to be CuSbSnS 3 .…”
Section: Resultsmentioning
confidence: 99%
“…A noticeable decrease in carrier mobility was also observed in the crystallized IZTO film deposited at 200 o C because grain boundary formation in the crystalline films formed an additional scattering barrier for electrons. 12 Therefore, the electrical resistivity increases drastically with increasing substrate temperature at 200 o C.…”
Section: Resultsmentioning
confidence: 99%
“…[4][5][6] In many respects the basic underpinning materials physics can be reasonably well set out. [7][8][9][10] Thus, the high conductivity of the prototypical transparent conducting oxide (TCO) SnO 2 -doped In 2 O 3 (ITO) derives from the presence of shallow donor or impurity states located close to the conduction band of the host (In 2 O 3 ), the donor states produced via chemical substitution of Sn 4 + for In 3 + or by the presence of oxygen vacancy impurities states [7] in In 2 O 3Àx (Figure 2). At room temperature the proximity of such impurity states to the host conduction band ensures facile thermal ionization into the band, developing, ultimately, a degenerate, itinerant electron gas of current-currying electrons which also gives rise to far-infrared (Drude-like) absorption and high electrical conductivity, but at the same time the fundamental host bandgap is left intact, that is, the electrically conductive material remains optically transparent in the visible region.…”
Section: Transparent Conducting Oxidesmentioning
confidence: 99%
“…Taken from Edwards et al [9] as modified from the work of Fan and Goodenough. [7] Reproduced with permission. Copyright The Royal Society of Chemistry.…”
Section: Prof Peter Edwards Is Head Of Inorganicmentioning
confidence: 99%