X-ray Photoelectron Study on the Adsorption of Anhydrous Hydrogen Fluoride  onto Silicon Native Oxide

Saito, Yoji; Nakazawa, Yutaka

doi:10.1143/jjap.36.l1466

Jpn. J. Appl. Phys.

1997

DOI: 10.1143/jjap.36.l1466

|View full text |Cite

X-ray Photoelectron Study on the Adsorption of Anhydrous Hydrogen Fluoride onto Silicon Native Oxide

Yoji Saito¹,

Yutaka Nakazawa²

Abstract: The adsorption of anhydrous hydrogen fluoride (AHF) on the surfaces of silicon native oxide was investigated by in situ X-ray photoelectron spectroscopy (XPS) in order to understand the reaction between HF and the oxide films at room temperature. A significant amount of the component is located at 670.0 eV binding energy in the observed XPS spectra, and is most likely derived from HF molecules. Moreover, the surface density of F-Si bonds slowly increases with the AHF exposure. We also attempted to a… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

1998

1999

Publication Types

Select...

Article3

Relationship

Self Cite0

Independent3

Authors

Journals

Cited by 3 publications

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Etching process of SiO2 by HF molecules

Hoshino

Nishioka

1999

The Journal of Chemical Physics

View full text Add to dashboard Cite

Ab initio theoretical computations have been performed to reveal the mechanism of the etching reaction of silicon oxide (SiO2) by HF molecules. The probable reaction paths, in which the etching reaction proceeds through four sequential steps to remove a single fragment of SiO2, are presented with their potential energy curves. In every step, the insertion of an HF molecule into an Si-O bond leads to the dissociation of the Si-O connection. The potential energy barriers evaluated along the reaction paths suggest that the HF molecule has an ability to etch the SiO2 surface. The strong interaction among HF molecules, however, likely causes HF polymer formation, which is expected to reduce the reaction rate of SiO2 etching.

show abstract

Etching process of SiO2 by HF molecules

Hoshino

Nishioka

1999

The Journal of Chemical Physics

View full text Add to dashboard Cite

show abstract

Adsorption of Anhydrous Hydrogen Fluoride onto Silicon and Native Oxide by XPS

Saito

1999

Surface Science Spectra

View full text Add to dashboard Cite

show abstract

Selective Etching of Silicon Native Oxide with Remote-Plasma-Excited Anhydrous Hydrogen Fluoride

Nakazawa¹,

Saito²

1998

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We demonstrate to the acceleration of the moistureless etching reaction between the silicon native oxide and the anhydrous hydrogen fluoride (AHF) gas, using remote-plasma-excited Ar gas at room temperature. The etching reaction is significantly enhanced by the remote-plasma-excitation for both the chemically grown native oxide films and the dehydrated oxide films. Then, we attempt to improve the selectivity of the oxide etching with respect to silicon by introducing hydrogen into this system, and to realize the highly selective etching of native oxide with respect to silicon. With the increase of the hydrogen partial pressure, the etch rate of silicon rapidly decreases due to the suppression of the density of fluorine radicals in the gas phase. We have confirmed the value of the etch rate selectivity to be at least 4.

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

X-ray Photoelectron Study on the Adsorption of Anhydrous Hydrogen Fluoride onto Silicon Native Oxide

Cited by 3 publications

References 7 publications

Etching process of SiO2 by HF molecules

Etching process of SiO2 by HF molecules

Adsorption of Anhydrous Hydrogen Fluoride onto Silicon and Native Oxide by XPS

Selective Etching of Silicon Native Oxide with Remote-Plasma-Excited Anhydrous Hydrogen Fluoride

Contact Info

Product

Resources

About